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Pulse-to-Pulse Laser Stability Effects on Multiple Shot Excimer Laser Crystallized a-Si Thin Films

Published online by Cambridge University Press:  15 February 2011

R. I. Johnson ,
G. B. Anderson ,
J. B. Boyce ,
D. K. Fork ,
P. Mei  and
S. E. Ready
R. I. Johnson
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd., Palo Alto, CA 94304
G. B. Anderson
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd., Palo Alto, CA 94304
J. B. Boyce
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd., Palo Alto, CA 94304
D. K. Fork
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd., Palo Alto, CA 94304
P. Mei
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd., Palo Alto, CA 94304
S. E. Ready
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd., Palo Alto, CA 94304
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Abstract

Laser crystallized amorphous silicon thin films on quartz exhibit a peak in the grain size, electron mobility and the Si (111) x-ray intensity as a function of the laser fluence, substrate temperature, film thickness, and the number of laser shots per unit area. The peak in grain size has also been shown to be dependent: on the stability of the pulse-to-pulse laser energy density, particularly at high shot densities. The shape of the distribution profile of the pulse-to-pulse laser fluence can significantly alter the grain growth at higher shot densities. The modified growth can be expressed by a simple model based on the mean and standard deviation of the laser energy density relative to the characteristic fluence at which the grain size, mobility, and Si (111) x-ray intensities are maximized.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 343: Symposium H – Polycrystalline Thin Films - Structure, Texture, Properties and Applications , 1994 , 703
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

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