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Pump-Probe Study of Bi1-xSbx Alloys

Published online by Cambridge University Press:  01 January 1992

J. Vidal ,
T.K. Cheng ,
A.W. Fung ,
H.J. Zeiger ,
G. Dresselhaus ,
M.S. Dresselhaust  and
E.P. Ippen
J. Vidal
Affiliation:
Department of Physics,Massachusetts Institute of Technology,Cambridge MA 02139
T.K. Cheng
Affiliation:
Department of Physics,Massachusetts Institute of Technology,Cambridge MA 02139
A.W. Fung
Affiliation:
Department of Physics,Massachusetts Institute of Technology,Cambridge MA 02139
H.J. Zeiger
Affiliation:
Department of Physics,Massachusetts Institute of Technology,Cambridge MA 02139
G. Dresselhaus
Affiliation:
Francis Bitter National Magnet Laboratory,MIT,Cambridge MA 02139
M.S. Dresselhaust
Affiliation:
Department of Electrical Engineering and Computer Science,MIT,Cambridge MA 02139
E.P. Ippen
Affiliation:
Department of Physics,Massachusetts Institute of Technology,Cambridge MA 02139
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Abstract

Bi1-xSbx alloys undergo a semimetal-semiconductor transition at x = 0.065 and 0.22 and are semiconducting between these limits. We investigate this system by means of femtosecond time-resolved experiments, and observe an optical response similar to those in Bi, Sb, Te and Ti2O3. A previously-reported model describes the mechanism of generation of coherent lattice vibrations via the optically excited carriers in this class of materials. As predicted by the model, the modulated reflectivity signal ΔR/R in Bi.88Sb.12 shows a beating oscillatory behavior with the Bi-Bi and Bi-Sb A1g vibrational frequencies. Model-based calculations of the ΔR background relaxation time at different Sb compositions provide understanding of the carrier and lattice dynamics throughout the transition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 291: Symposium O – Materials Theory and Modeling , 1992 , 413
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

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