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Quantum Confinement in Nanocrystalline Superlattices

Published online by Cambridge University Press:  10 February 2011

G. F. Grom ,
P. M. Fauchet ,
L. Tsybeskov ,
J. P. Mccaffrey ,
H. J. Labbé  and
D. J. Lockwood
G. F. Grom
Affiliation:
Materials Science Program, Department of Mechanical Engineering, University of Rochester, Rochester, NY 14627
P. M. Fauchet
Affiliation:
Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY 14627
L. Tsybeskov
Affiliation:
Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY 14627
J. P. Mccaffrey
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa K1A OR6, Canada
H. J. Labbé
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa K1A OR6, Canada
D. J. Lockwood
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa K1A OR6, Canada
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Abstract

Photoconductance spectroscopy was used to probe the effects of quantum confinement in nanocrystalline (nc)-Si/amorphous (a)-SiO2 superlattices (SLs). A Metal-Oxide-Semiconductor (MOS)-like structure with the nc-Si SL incorporated in the oxide was fabricated to study charging/discharging processes in Si nanocrystals. The fine structure observed in photoconductance spectra at low temperatures was interpreted in terms of singularities in the carrier density of states, possibly due to energy quantization. In addition, a low-resistance sample exhibited photocurrent oscillations with a frequency of several kHz, which could be a manifestation of sequential resonant carrier tunneling in the nc-Si/a-SiO2 SL.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 592 , 1999 , 363
Copyright
Copyright © Materials Research Society 2000

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References

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