Hostname: page-component-77c89778f8-n9wrp Total loading time: 0 Render date: 2024-07-19T21:25:06.387Z Has data issue: false hasContentIssue false
  • English
  • Français

Quantum Dot Lasers and Amplifiers

Published online by Cambridge University Press:  01 February 2011

Udo W. Pohl  and
Dieter Bimberg
Udo W. Pohl
Affiliation:
Institut für Festkörperphysik, PN 5–2, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany
Dieter Bimberg
Affiliation:
Institut für Festkörperphysik, PN 5–2, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany
Get access

Abstract

Progress in self-organized epitaxy of quantum dots lead to fabrication of edge- and surface-emitting lasers featuring excellent device characteristics. Exceedingly low lasing threshold, an internal quantum efficiency near unity, high characteristic temperature was proved, and high power operation was demonstrated. We present recent achievements on lasers and optical amplifiers based on InGaAs quantum dots in GaAs matrix.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 799: Symposium Z – Progress in Compound Semiconductor Materials III - Electronic and Optoelectronic Applications , 2003 , Z7.1/T7.1
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Arakawa, Y., Sakaki, H., Appl. Phys. Lett. 40, 939 (1982).Google Scholar
2. Kirstaedter, N., Ledentsov, N. N., Grundmann, M., Bimberg, D., Ustinov, V. M., Ruvimov, S. S., Maximov, M. V., Kop'ev, P. S., Alferov, Zh. I., Richter, U., Werner, P., Gösele, U., Heydenreich, J., Electron. Lett. 30, 1416 (1994).Google Scholar
3. Kirstaedter, N., Schmidt, O. G., Ledentsov, N. N., Bimberg, D., Ustinov, V. M., Egorov, A. Yu., Zhukov, A. E., Maximov, M. V., Kop'ev, P. S., Alferov, Zh. I., Appl. Phys. Lett. 69, 1226 (1996).Google Scholar
4. Heinrichsdorff, F.,, Grundmann, M., Stier, O., Krost, A., Bimberg, D., J. Crystal Growth 195, 540 (1998).Google Scholar
5. Sellin, R. L., Heinrichsdorff, F., Ribbat, Ch., Grundmann, M., Pohl, U. W., Bimberg, D., J. Crystal Growth 221, 581 (2000).Google Scholar
6. Maximov, M. V., Tsatsul'nikov, A. F., Volovik, B. V., Sizov, D. S., Shernyakov, Yu. M., Kaiander, I. N., Zhukov, A. E., Kovsh, A. R., Mikhrin, S. S., Ustinov, V. M., Alferov, Zh. I., Heitz, R., Shchukin, V. A., Ledentsov, N. N., Bimberg, D., Musikhin, Yu. G., Neumann, W., Phys. Rev. B 62, 16671 (2000).Google Scholar
7. Guffarth, F., Heitz, R., Schliewa, A., Stier, O., Ledentsov, N. N., Kovsh, A. R., Ustinov, V. M., Bimberg, D., Phys. Rev. B 64, 085305 (2001).Google Scholar
8. Lenz, A., Timm, R., Eisele, H., Hennig, Ch., Becker, S. K., Sellin, R. L., Pohl, U. W., Bimberg, D., Dähne, M., Appl. Phys. Lett. 81, 5150 (2002).Google Scholar
9. Sellin, R. L., Kaiander, I., Ouyang, D., Kettler, T., Pohl, U. W., Bimberg, D., Zakharov, N. D., Werner, P., Appl. Phys. Lett. 82, 841 (2003).Google Scholar
10. Sellin, R. L., Ribbat, Ch., Grundmann, M., Ledentsov, N. N., Bimberg, D., Appl. Phys. Lett. 78, 1207 (2001).Google Scholar
11. Ribbat, Ch., Sellin, R., Grundmann, M., Bimberg, D., Phys. Stat. Sol. (b) 224, 819 (2001).Google Scholar
12. Sellin, R. L., Ribbat, C., Bimberg, D., Rinner, F., Konstanzer, H., Kelemen, M. T., Mikulla, M., Electron. Lett. 38, 883 (2002).Google Scholar
13. Grundmann, M., Heinrichsdorff, F., Ledentsov, N. N., Ribbat, C., Bimberg, D., Zhukov, A. E., Kovsh, A. R., Maximov, M. V., Shernyakov, Y. M., Lifshits, D. A., Ustinov, V. M., Alferov, Zh. I., Jpn. J. Appl. Phys. 39, 2341 (2000).Google Scholar
14. Mao, M.-H., Heinrichsdorff, F., Krost, A., Bimberg, D., Electron. Lett. 33, 1641 (1997).Google Scholar
15. Saito, H., Nishi, K., Ogura, I., Sugou, S., Sugimoto, Y., Appl. Phys. Lett. 69, 3140 (1996).Google Scholar
16. Lott, J. A., Ledentsov, N. N., Ustinov, V. M., Maleev, N. A., Zhukov, A. E., Kovsh, A. R., Maximov, M. V., Volovik, B. V., Alferov, Zh. I., Bimberg, D., Electron. Lett. 36, 1384 (2000).Google Scholar
17. Lott, J. A., Ledentsov, N. N., Ustinov, V. M., Bimberg, D., IEE Digest LEOS Summer Topical Meeting, Paper MA2–3, p. 17, NJ 2001;Google Scholar
Bimberg, D., Ledentsov, N.N., Lott, J.A., MRS Bull. 27, 531 (2002).Google Scholar
18. Lott, J. A., Ledentsov, N. N., Kovsh, A. R., Ustinov, V. M., Bimberg, D., Proc. LEOS p. 499, WD1 (2003).Google Scholar
19. Hopfer, F., Kaiander, I., Sellin, R. L., Lochmann, A., Haisler, V., Möller, C., Grote, N., Bimberg, D., European Semiconductor Laser Workshop, Torino, Italy, Sept. 2003.Google Scholar
20. Borri, P., Langbein, W., Hvam, J. M., Heinrichsdorff, F., Mao, M.-H., Bimberg, D., IEEE Photon. Technol. Lett. 12, 594 (2000).Google Scholar
21. Borri, P., Langbein, W., Hvam, J. M., Heinrichsdorff, F., Mao, M.-H., Bimberg, D., Phys. Stat. Sol. (b) 224, 419 (2001).Google Scholar