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Quantum Interference Effect in Narrow n+-GaAs Wires
Published online by Cambridge University Press: 25 February 2011
Abstract
Our experimental results about aperiodic magnetoconductance in narrow n+-GaAs wire are described. These wires are fabricated in an MOCVD grown n+-GaAs film by electron beam lithography and the dry etching technique. It is found that the aperiodic structure arises from the quantum interference which is important in small structures (<1in). The experimental results are compared to the recent theory.
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