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Quantum Ring Infrared Photodetector Based On Droplet Epitaxy Technique

Published online by Cambridge University Press:  31 January 2011

Dali Shao
Affiliation:
dshao@uark.edu, University of Arkansas, Electrical Engineering, Fayetteville, Arkansas, United States
Jiang Wu
Affiliation:
jiang731@gmail.com, University of Arkansas, Electrical Engineering, Fayetteville, Arkansas, United States
Zhenghua Li
Affiliation:
aluali@uark.edu, University of Arkansas, Institue of Nanoscale Science and Engineering, Fayetteville, Arkansas, United States
Omar Manasreh
Affiliation:
manasreh@uark.edu, United States
Vasyl P Kunets
Affiliation:
vkanets@uark.edu, University of Arkansas, Institue of Nanoscale Science and Engineering, Fayetteville, Arkansas, United States
Zhiming M Wang
Affiliation:
zmwang@uark.edu, University of Arkansas, Institute of Nanoscale Science and Engineering, Fayetteville, Arkansas, United States
Gregory J. Salamo
Affiliation:
salamo@uark.edu, United States
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Abstract

In this work, we design and fabricate a GaAs quantum ring infrared photodetector. The lattice matched GaAs/Al0.3Ga0.7As quantum rings are grown by using molecular beam epitaxy technique. The morphology of the quantum rings are characterized by an atomic force microscopy. Normal incident configured photodetectors are fabricated by standard photolithography. The photoresponse spectra are measured by a Fourier transform infrared spectrometer and exhibit two broad bands in visible-near-infrared and mid-infrared spectral range. Using quantum rings as absorption medium, we observed visible-near-infrared response at a temperature as high as 300 K while mid-infrared response up to 140 K.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

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