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Quasi-Fermi Energy and Steady-State Recombination Demarcation Level in a-Si:H

Published online by Cambridge University Press:  21 February 2011

J. Z. Liu
J. Z. Liu*
Affiliation:
NEC Research Institute, 4 Independence Way, Princeton, NJ 08540 U.S.A.
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Abstract

A specially designed photoconductivity experiment directly shows that, above room temperature, the steady-state recombination lifetime of the free electrons in undoped amorphous silicon can be described by the free electron quasi-Fermi energy alone. The apparent discrepancy on recombination demarcation levels between the Rose model and the Simmons-Taylor model is resolved by including the effect of the occupation function. The significance of the free electron quasi-Fermi level is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 759
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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