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Raman Scattering Spectra in Be-Implanted GaN Epilayers

Published online by Cambridge University Press:  01 February 2011

L. S. Wang ,
W. H. Sun  and
S. J. Chua
L. S. Wang
Affiliation:
Institute of Material Research & Engineering, 3 Research Link, 117602, Singapore
W. H. Sun
Affiliation:
Institute of Material Research & Engineering, 3 Research Link, 117602, Singapore
S. J. Chua
Affiliation:
Institute of Material Research & Engineering, 3 Research Link, 117602, Singapore
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Abstract

Ion-implantation has been an interesting topic on impurity-doping in GaN. Raman measurement is a strong tool for the characterization of semiconductors. We have investigated the Raman scattering spectra in Be-implanted GaN epilayers. In as-implanted GaN, new Raman bands at ∼310, ∼360, 669 cm-1 appeared. From phonon-dispersion curves for hexagonal GaN, the ∼300 cm-1 and 669 cm-1 bands were assigned to the highest acoustic-phonon branch and the optical-phonon branch at the Brillouin zone boundaries, respectively. Two sharp bands at 168 and 199 cm-1 were observed in the Raman spectra of Be-implanted GaN after post-implantation annealing treatments. We tentatively assign these two bands to Be-related local vibrational modes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 719: Symposium F – Defect- and Impurity-Engineered Semiconductors and Devices III , 2002 , F8.28
Copyright
Copyright © Materials Research Society 2002

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