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Raman Scattering Study of Interface Reactions of Co/SiGe

Published online by Cambridge University Press:  03 September 2012

Hong Ying ,
Zhihai Wang ,
D. B. Aldrich ,
D. E. Sayers  and
R. J. Nemanich
Hong Ying
Affiliation:
Department of Physics and Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202
Zhihai Wang
Affiliation:
Department of Physics and Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202
D. B. Aldrich
Affiliation:
Department of Physics and Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202
D. E. Sayers
Affiliation:
Department of Physics and Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202
R. J. Nemanich
Affiliation:
Department of Physics and Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202
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Abstract

Raman scattering measurements are used to characterize Co/Si, Co/Ge and CO/Si0.8Ge0.2 thin film reactions. For Co/Si samples, the phase transitions Co--CoSi--CoSi2 are identified by Raman spectroscopy. For Co/Ge samples, Raman features associated with Co5Ge 7 and CoGe2 phases were observed. For CO/Si0.8Ge0.2 samples, only CoSi was identified along with Ge enriched SiGe alloy peaks. No features associated with CoGe or Co(SiGe) were found.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 320: Symposium D – Silicides, Germanides, and Their Interfaces , 1993 , 335
Copyright
Copyright © Materials Research Society 1994

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References

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