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Raman Spectroscopy for Semiconductor Thin Film Analysis

Published online by Cambridge University Press:  25 February 2011

R. J. Nemanich
R. J. Nemanich*
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
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Abstract

The application of Raman spectroscopy to various semiconductor thin film, interface and surface problems will be presented. Specific focus will be on the vibrational excitations of the materials systems which are probed by the Raman measurements. Experimental configurations are described which are optimized for general thin film analysis, microprobe analysis, and in situ UHV surface/interface analysis. The vibrational properties can be used for phase and composition identification, crystal/amorphous structure, strain, impurity configurations, and superlattice properties. Specific examples will include thermal processing of CVD Si films, microprobe of laser annealed films, MOCVD AlxGa1−xAs films, silicide formation and identification, amorphous superlattices, and hydrogen impurities in crystalline Si.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 69: Symposium D – Materials Characterization , 1986 , 23
Copyright
Copyright © Materials Research Society 1986

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