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Raman Studies on Potential substrate Materials of Sr(Al1/2Ta1/2)O3 and Sr(Al1/2Nb1/2)O3 For Htsc

Published online by Cambridge University Press:  15 February 2011

Ruiwu Tao ,
A.R. Guo ,
C.-S. Tu ,
I. Siny ,
R.S. Katiyar ,
Ruyan Guo  and
A.S. Bhalla
Ruiwu Tao
Affiliation:
Department of Physics, University of Puerto Rico, Rio Piedras, PR 00931-3343
A.R. Guo
Affiliation:
Department of Physics, University of Puerto Rico, Rio Piedras, PR 00931-3343
C.-S. Tu
Affiliation:
Department of Physics, University of Puerto Rico, Rio Piedras, PR 00931-3343
I. Siny
Affiliation:
Department of Physics, University of Puerto Rico, Rio Piedras, PR 00931-3343
R.S. Katiyar
Affiliation:
Department of Physics, University of Puerto Rico, Rio Piedras, PR 00931-3343
Ruyan Guo
Affiliation:
Materials Research Laboratory, Penn. State University, University Park, PA 16802
A.S. Bhalla
Affiliation:
Materials Research Laboratory, Penn. State University, University Park, PA 16802
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Abstract

Complex oxide perovskites, namely strontium aluminum tantalum oxide (SAT) and strontium aluminum niobium oxide (SAN) were recently investigated to be potential substrate materials for HTSC films in microwave applications. Single crystals were prepared by laser heated pedestal growth technique (LHPG). We report Raman vibrational spectrum studies on them for the first time. Order-disorder effects of (Al, Ta) and (Al, Nb) sites were studied with particular interests by comparing Raman spectra of single-crystal samples with ceramic samples. Influences of B sites (Ta and Nb) on O-O modes are discussed in relation to their dielectric properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 397: Symposium B – Advanced laser Processing of Materials-Fundamentals and Applications , 1995 , 357
Copyright
Copyright © Materials Research Society 1996

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References

VI. REFERENCES

1 Guo, R., Bhalla, A.S., Sheen, Jyh, Ainger, F.W., Erdei, S., subbarao, E.C., and Cross, L.E., J. Mater. Res., 10, 1, (1995).Google Scholar
2 Findikoglu, A.T., Doughty, C., Bhattacharya, S., Li, Qi, Xi, X.X., and Venkatesan, T., Appl. Phys. Lett 61(14), (1992).Google Scholar
3 Ryan, J.F, Katiyar, R.S. and Taylor, W., Effet Raman Et Théorie, C2-49.Google Scholar
4 Gregora, I., Petzelt, J., Pokorny, J., Vorlicek, V., and Zikmund, Z., Solid State Comm., vol. 94, 11,899, (1995).Google Scholar
5 Siny, I.G., and Smirnova, T.A., Ferroelectrics, 90, 191, (1989)Google Scholar
6 Bismayer, U., Devarajan, V. and Groves, P., J. Phys. Condens. Matter 1, 6977, (1989).Google Scholar