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Rapid Annealing of GaAs and Related Compounds

Published online by Cambridge University Press:  25 February 2011

J.S. Williams  and
S.J. Pearton
J.S. Williams
Affiliation:
Microelectronics Technology Centre, Royal Melbourne Institute of Technology, Melbourne 3000 Australia.
S.J. Pearton
Affiliation:
Microelectronics Technology Centre, Royal Melbourne Institute of Technology, Melbourne 3000 Australia.
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Abstract

In recent years, rapid annealing of GaAs has been employed to activate ion implanted dopants and to produce metal-semiconductor contacts. More recently, rapid heating techniques have been used to anneal heterostructures without degrading requisite high mobilities of SDHT devices. This paper reviews the various annealing regimes which are useful for heat treating GaAs and related compounds. Examples are chosen which illustrate unique and potentially useful features of rapid annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 427
Copyright
Copyright © Materials Research Society 1985

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References

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