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Rapid Thermal Annealing of Neutron Transmutation Toped Czochralski Silicon
Published online by Cambridge University Press: 03 September 2012
Abstract
The influence of the rapid thermal annealing (RTA) in comparison with that of the standard furnace annealing (FA) on the electrical parameters and photoluminescence (PL) of Czochralski silicon (Cz Si) subjected to neutron irradiation at various temperatures has been studied. The role of the irradiation temperature on the annealing behaviour of electrical parameters in Cz Si has been established. The possibility of getting neutron transmutation doped (NTD) Cz Si having the calculated resistivity by means of the RTA is shown.
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- Copyright © Materials Research Society 1992