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Rapid Thermal Annealing of Ni/Al/Si and Ni/Si Systems

Published online by Cambridge University Press:  28 February 2011

A. Katz  and
Y. KOMEM
A. Katz
Affiliation:
Dept. of Materials Engineering, Technion – Israel Institute of Technology, Haifa 32000, Israel
Y. KOMEM
Affiliation:
Dept. of Materials Engineering, Technion – Israel Institute of Technology, Haifa 32000, Israel
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Abstract

The effect of Rapid Thermal Annealing on phase formation and diffusion processes in the Ni(30 nm) /Al(10 nm)/Si system was studied and coxpared to a Ni(30 nm)/Si reference system. Heat treatments were carried out at temperatures between 400°C and 900°C for 2 seconds.

The results obtained by means of TEM, AES and XRD indicated that the Ni/Al/Si system underwent a local melting in the intermediate Al layer at the Al/Si eutectic temperature (577°C). This reaction, due to the rapid melting process, resulted in formation of a unique layered-structure composed of a columnar polycrystalline layer (60 nm thick) of Ni2Si and NiSi adjacent to the Si substrate with relatively smooth interface and an outer layer of two separate polycrystalline films (both about 10 m thick) of Al3Ni (inside) and Ni(Al0.5Si0.5 ) (outside). Under the same rapid thermal processing conditions the Ni/Si reference system underwent a solid state reaction which resulted in the formation of a polycrystalline layer (60 nm thick) composed of Ni2Si and NiSi as well as NiSi2.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 74: Symposium A – Beam-Solid Interactions and Transient Processes , 1986 , 647
Copyright
Copyright © Materials Research Society 1987

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