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γ - Ray Detectors Based on Composite A1B5C6 Semiconductors

Published online by Cambridge University Press:  01 February 2011

Galina Khlyap ,
Mikhail Andrukhiv  and
Ludmila Panchenko
Galina Khlyap
Affiliation:
State Pedagogical University, 24 Franko str., Drogobych, 82100, Ukraine
Mikhail Andrukhiv
Affiliation:
State Pedagogical University, 24 Franko str., Drogobych, 82100, Ukraine
Ludmila Panchenko
Affiliation:
Sumy State University, 2 Rimskii-Korsakov str., Sumy 40007, Ukraine
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Abstract

Metal-semiconductor structures based on composite semiconductors A1B5C6 are investigated as possible γ-ray detectors. Electric measurements carried out on the samples before the irradiation have exhibited no special peculiarities. After irradiation the analogous investigations have shown dramatic changes of charge carriers transport. Numerical analysis showed the field-current characteristics similar to the p-n-homo-junction: the forward current is described by the power law I∼(Fa)3/2, where Fa stands for applied electric field. Under reverse bias two clear modes of the carriers transport are observed: under the so-called threshold field FTR ∼ 300 V/m the experimental current is governed by quasi-ohmic law I∼(Fa)0.8; as the applied field exceeds the threshold value, the field-current dependence points out the strong trap-assistant tunneling processes: I∼(Fa)5.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 792: Symposium R – Radiation Effects and Ion Beam Processing of Materials , 2003 , R3.4
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

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