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Reaction And Interdiffusion at III-V Compound Semiconductor-Metal Interfaces
Published online by Cambridge University Press: 26 February 2011
Abstract
The characterization of III-V compound semiconductor-metal interfaces by surface science techniques has led to new relationships between interfacial chemistry and Schottky barrier formation. These and recent results on ternary alloy III-V compounds suggest a greater control of Schottky barrier heights by atomic scale techniques and advanced III-V materials than previously believed.
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- Copyright © Materials Research Society 1986