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Reaction and Transport Models of the MOVPE of Ternary III-V Semiconductors

Published online by Cambridge University Press:  22 February 2011

N. K. Ingle  and
T. J. Mountziaris
N. K. Ingle
Affiliation:
Department of Chemical Engineering and Center for Electronic and Electro-optic Materials, State University of New York, Buffalo, NY 14260
T. J. Mountziaris
Affiliation:
Department of Chemical Engineering and Center for Electronic and Electro-optic Materials, State University of New York, Buffalo, NY 14260
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Abstract

Reaction and transport models describing the deposition of thin films of ternary compoundsemiconductors by Metalorganic Vapor Phase Epitaxy (MOVPE) are being developed. The growth of AlxGa1−x As (0≤x≤1) films from trimethyl-aluminum (TMA1), trimethyl-gallium (TMG) and arsine has been used as a typical example. A kinetic model of the process including both gas phase and surface reactions has been coupled to a two-dimensional transport model of a horizontal reactor with a flat susceptor. The model predicts reported experimental observations on growth rates and film compositions [1] using a single adjustable parameter, the activation energy of the the AlAs growth reaction. A parametric study was performed to identify operating conditions maximizing the thickness andcompositional uniformity of the deposited films. All inlet flow rates considered in this work were higher than the ones required to suppress transverse buoyancy-driven recirculations in the reactor [2,3]. Such conditions permit the growth of abrupt heterojunctions byrapidly switching various precursors on and off. Our results indicate that the most promising operating conditions coincide with the transition from kinetic limited to diffusion limited growth, which occurs at temperatures between 800 K and 850 K for typical experiments [1]. The optimal inlet mole fraction of the limiting group-III species was found to be about 6×10−4 for such cases.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 99
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. van Sark, W.G.J.H.M. et al., J. Appl. Phys. 64 (1), 195 (1988).Google Scholar
2. Jensen, K.F., Einset, E.O. and Fotiadis, D.I., Annu. Rev. Fluid Mech. 23, 197 (1991).Google Scholar
3. Ingle, N.K. and Mountziaris, T.J., manuscript in preparation.Google Scholar
4. Kuech, T.F., Mat. Sci. Rep. 2, 1 (1987).Google Scholar
5. Tirtowidjojo, M. and Pollard, R., J. Crystal Growth 93, 108 (1988).Google Scholar
6. Mountziaris, T.J. and Jensen, K.F., J. Electrochem. Soc. 138(8), 2426 (1991).Google Scholar
7. Jensen, K.F., Fotiadis, D.I. and Mountziaris, T.J., J. Crystal Growth 107, 1 (1991).Google Scholar
8. Mountziaris, T.J., Kalyanasundaram, S. and Ingle, N.K., J. Crystal Growth, submitted.Google Scholar
9. Mountziaris, T. J., Ingle, N.K. and Kalyanasundaram, S., Mat. Res. Soc. Symp. Proc. 204, 219 (1991).Google Scholar
10. Einset, E.O., Jensen, K.P. and Kuech, T.F., Mat. Res. Soc. Symp. Proc. 204, 207 (1991).Google Scholar
11. Jacko, M.G. and Price, S.W., Can. J. Chem. 41, 1560 (1963).Google Scholar
12. Yeddanapalli, L. and Schubert, C.C., J. Chem. Phys. 14(1), 1 (1946).Google Scholar
13. Gaskill, D.K., Kolubayev, V., Bottca, N., Sillmon, R.S., and Butler, J.E., J. Crystal Growth 22, 127 (1988).Google Scholar
14. Tsang, W. and Hampson, R.F., J. Phys. Chem. Ref. Data 15, 1087 (1986).Google Scholar
15. Donnelly, V.M., McCaulley, J.A. and Shul, R.J., Mater. Res. Soc. Symp. Proc. 204, 15(1991).Google Scholar
16. Yu, M.L., Memmert, U., Buchan, N.I. and Kuech, T.F., Mater. Res. Soc. Symp. Proc. 204, 37(1991).Google Scholar
17. Squire, D.W., Dulcey, C.S. and Lin, M.C., J. Vac. Sci. Technol. B 3 (5), 1513 (1985).Google Scholar
18. Lüth, H. and Matz, R., Phys. Rev. Lett. 60, 1652 (1981).Google Scholar
19. Mokwa, W., Kohl, D. and Heiland, G., Phys. Rev. B 29, 6709 (1984).Google Scholar