Hostname: page-component-5c6d5d7d68-wbk2r Total loading time: 0 Render date: 2024-08-18T14:26:18.989Z Has data issue: false hasContentIssue false
  • English
  • Français

Reaction Kinetics of Sputter-Deposited Ti On SiO2 Substrates during Rapid Thermal Annealing

Published online by Cambridge University Press:  25 February 2011

E.J. Yun ,
H.G. Chun ,
K. Jung ,
D.L. Kwong  and
S. Lee
E.J. Yun
Affiliation:
Microelectronics Reasearch Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712
H.G. Chun
Affiliation:
Microelectronics Reasearch Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712
K. Jung
Affiliation:
Microelectronics Reasearch Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712
D.L. Kwong
Affiliation:
Microelectronics Reasearch Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712
S. Lee
Affiliation:
NCR Corporation, 1635 Aeroplaza Dr., Colorado Springs, CO 80916
Get access

Abstract

In this paper, the interactions of sputter-deposited Ti on SiO2 substrates during rapid thermal annealing in nitrogen at 550°C - 900°C for 10 - 60 s have been systematically studied using X-ray diffraction, Auger electron spectroscopy, transmission electron diffraction, TEM & cross-sectional TEM, and sheet resistance measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 146: Symposium B – Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing , 1989 , 255
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Brat, T., Osburn, C.M., Finstad, T., Liu, J., and Ellington, B., J. Electrochem.Soc., Vol. 133, No. 7, pp. 1451, (1986).CrossRefGoogle Scholar
[2] Ting, C.Y., Wittmer, M., Iyer, S.S., and Brodsky, S.B., J. Electrochem. Soc., Vol. 131, No. 12, pp. 2934, (1984).CrossRefGoogle Scholar
[3] Bulter, A.L. and Foster, D.J., IEEE Trans. Electron Devices, Vol. ED–32, pp. 150–155, (1985).Google Scholar
[4] Lai, F.S., Sun, J.Y.C., Dhong, S.H., IEEE Trans. Electron Devices, Vol. ED–33, pp.345–353, (1986).Google Scholar
[5] Lau, C.K., See, Y.C., Scott, D.B., Bridges, J.M., Perna, S.N., and Davies, R.D., IEDM Tech. Dig. 82, 714, (1982).Google Scholar
[6] Alperin, M.E., Holloway, T.C., Haken, R.A., Gosmeyer, C.D., Karnaugh, R.V., and Parmantie, W.D., IEEE Trans. Electron Devices ED–32, 141, (1985).CrossRefGoogle Scholar
[7] Morgan, A.E., Broadbent, E.K., Ritz, K.N., Sadana, D.K., and Burrow, B.J., J. Appl. Phys., Vol. 64, No. 1, pp. 344, (1988).CrossRefGoogle Scholar
[8] Beyers, R., J. Appl. Phys., Vol. 56, pp. 147, (1984).CrossRefGoogle Scholar
[9] ASTM X-ray diffraction data card No. 29–1362, 10-225, 5-0682, and 17-424.Google Scholar
[10] Koh, Y., Chien, F., and Vora, M., J. Vac. Sci. Technol. B, Vol. 3, No. 6, pp. 1715, (1985).CrossRefGoogle Scholar