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Reaction Sintering Mechanism of Submicrometer Silicon Powder in Nitrogen

Published online by Cambridge University Press:  25 February 2011

Yoshiyuki Yasutomi ,
Masahisa Sobue  and
Jiro Kondo
Yoshiyuki Yasutomi
Affiliation:
Hitachi Research Laboratory, Hitachi Ltd., Ibaraki 319–12 JAPAN
Masahisa Sobue
Affiliation:
Hitachi Research Laboratory, Hitachi Ltd., Ibaraki 319–12 JAPAN
Jiro Kondo
Affiliation:
Advanced Materials & Technology Research Lab., Nippon Steel Corp., Kawasaki 211 JAPAN
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Abstract

Knowing the nitridation mechanism of Si is important to obtain near-net-shape high strength reaction bonded ceramics. In this report, comparison of nitridation mechanism of small spherical Si powder produced by plasma arc method and large faceted Si powder, is discussed on the basis of microstructural analyses by SEM and TEM. From the analyses, nitrogen diffuses through the oxide film of Si powder and forms Si3N4 under the oxide films during the initial stage of sintering. At higher temperature, the oxide film transform into fine Si3N4 grains when heated to the 1350°C. The Si3N4 has morphology of hollow shell and a size, which corresponds to that of the original Si particles.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 271: Symposium N – Better Ceramics Through Chemistry V , 1992 , 813
Copyright
Copyright © Materials Research Society 1992

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References

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