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Reactive Coevaporation of SrTiO3 Thin Films for Tunable Microwave Devices

Published online by Cambridge University Press:  17 March 2011

Luke S.-J. Peng
Affiliation:
Conductus, Inc., 969 W. Maude Ave., Sunnyvale, CA 94085, lpeng@conductus.com
Nina F. Heinig
Affiliation:
Conductus, Inc., 969 W. Maude Ave., Sunnyvale, CA 94085
Brian H. Moeckly
Affiliation:
Conductus, Inc., 969 W. Maude Ave., Sunnyvale, CA 94085
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Abstract

We have successfully grown SrTiO3 films on LaAlO3 and MgO substrates up to 2” in diameter using the deposition technique of reactive coevaporation. We have explored a wide range of deposition temperatures, oxygen pocket pressures, and compositions in order to determine the optimal growth process window. X-ray diffraction analyses indicate that the process window for growth on MgO substrates is narrower than for LaAlO3 substrates. Dielectric property measurements show that samples near stoichiometry have higher tunability, but their peak loss tangents are also high (∼0.02). The slightly Sr-poor samples (46-48 at.%) show a reduced loss tangent (<0.01) while maintaining an acceptable tunability (∼50%) at an average electric field of 1.7 V/μm.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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References

1. See, e.g., Materials Issues for Tunable RF and Microwave Devices, edited by Jia, Q., Miranda, F.A., Oates, D.E., and Xi, X.X.. (Mat. Res. Soc. Symp. Proc., 603, Warrendale PA: MRS, 2000).Google Scholar
2. Moeckly, B.H. and Zhang, Y.M., Mat. Res. Soc. Symp. Proc. (Edited by Jia, Q., Miranda, F.A., Oates, D.E., and Xi, X.X.), 603, 4546 (2000).Google Scholar
3. Moeckly, B.H. and Zhang, Y.M., IEEE Trans. Appl. Supercond. 11, 450453 (2001).Google Scholar
4. Berberich, P., Utz, B., Prusseti, W., and Kinder, H., Physica C 219, 497 (1994).Google Scholar
5. Matijasevic, V.C. and Slycke, P., Proc. SPIE (Edited by Pavuna, D. and Bozonic, I.) 3481, 190196 (1998).Google Scholar
6. Dalberth, M.J., Stauber, R.E., Price, J.C., Rogers, C.T., and Galt, D., Appl. Phys. Lett. 72, 507 (1998).Google Scholar
7. Gevorgian, S.S., Martinsson, T., Linnér, P.L.J., and Kollberg, E.L., IEEE Trans. Microwave Theory and Techniques 44, 896 (1996).Google Scholar
8. Swanson, H., JCPDS-ICDD, PDF number 35-734, PDF-2 Data Base 1996, International Centre for Diffraction Data, 12 Campus Blvd, Newton Square, PA 19073-3273.Google Scholar
9. Nicholas, D., Horder, J., and Betts, T., JCPDS-ICDD, PDF number 40-1500, PDF-2 Data Base 1996, International Centre for Diffraction Data, 12 Campus Blvd, Newton Square, PA 19073-3273.Google Scholar