Hostname: page-component-84b7d79bbc-lrf7s Total loading time: 0 Render date: 2024-07-28T02:18:31.337Z Has data issue: false hasContentIssue false
  • English
  • Français

Recent Advances in A-Si Solar Cell Technology in Japan

Published online by Cambridge University Press:  28 February 2011

Y. Kuwano
Y. Kuwano*
Affiliation:
Research Center, SANYO Electric Co., Ltd.1-18-13 Hashiridani, Hirakata City, Osaka, Japan
Get access

Abstract

Recent advances in a-Si solar cells in Japan are reviewed. Improvements in single-junction and multi-junction solar cells are described in three main points, namely, fabrication methods, materials, and cell structures. Recently, a conversion efficiency of 11.7% was obtained for a single-junction structure. For an a-Si/poly-Si stacked structure and an a-Si/(CdS/CdTe) 4 terminal structure, conversion efficiencies of more than 13% were achieved.

Then recent advances in the prevention of the light induced degradation of a-Si solar cells is mentioned. Several methods which can improve the a-Si solar cell stability are described.

Finally, the present status of the industrialization of a-Si solar cells and some of the latest applications are described together with their propects.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 455
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Hamakawa, Y., MRS Symposia Proceedings 49, 239 (1985); S. Nakano et al., MRS Symposia Proceedings, 49, 275 (1985)Google Scholar
2. Kuwano, Y., Technical Digest of the Int'l PVSEC-1, Kobe, Japan 571 (1984)Google Scholar
3. Kuwano, Y. et al., Presented at the 33rd Spring Meeting of the Japan Soc. Appl. Phys., Chiba, Japan (1986)Google Scholar
4. Presented at the 12th Amorphous Seminar, Otsu, Japan (1986)Google Scholar
5. Tsuda, S. et al., Proc. 18th IEEE Photovol. Spec. Conf., Las Vegas, 1985 (in press)Google Scholar
6. Konagai, M. et al., Proc. 18th IEEE Photovol. Spec. Conf., Las Vegas, 1985 (in press)Google Scholar
7. Yoshikawa, A. et al., Jpn. J. Appl. Phys. 23 L91 (1984)Google Scholar
8. Imagawa, T. and Hanabusa, M., Jpn. J. Appl. Phys. 23 L473 (1984)Google Scholar
9. Hirose, M. and Miyazaki, S., J. Non-Cryst. Solids., 66 327 (1984)CrossRefGoogle Scholar
10. Kruanagam, D. et al., Technical Digest of the Int'l PVSEC-1, Kobe, Japan 437 (1984)Google Scholar
11. Tarui, H. et al., Proc. 46th Autumn Meeting of the Japan Soc. Appl. Phys., Kyoto, Japan (1985)Google Scholar
12. Yoshida, T. et al., Jpn. J. Appl. Phys. L7 (1986)Google Scholar
13. Tsuge, K. et al., Technical Digest of the Int'l PVSEC-1, Kobe, Japan 179 (1984)Google Scholar
14. Nonomura, S. et al., Jpn. J. Appl. Phys., Suppl.21–2 279 (1982)Google Scholar
15. Takakura, H. et al., Technical Digest of the Int'l PVSEC-1, Kobe, Japan 641 (1984)Google Scholar
16. Hamakawa, Y. et al., Proc. 18th IEEE Photovol. Spec. Conf., Las Vegas, 1985 (in press);to be presented at the MRS 1986 Spring Meeting, Palo AltoGoogle Scholar
17. Matsuda, A. et al., Jpn. J. Appl. Phys., 25-1 L54 (1984)Google Scholar
18. Sichanugrist, P. et al., Extended Abstracts of the 17th Conference on Solid State Devices and Materials, Tokyo, Japan 103 (1985)Google Scholar
19. Ichimura, T. et al., Proc. 46th Autumn Meeting of the Japan Soc. Appl. Phys., Kyoto, Japan 758 (1985)Google Scholar
20. Yukimoto, Y., Proc. EPRI-MITI/NEDO Workshop (1985)Google Scholar
21. Ishii, M. et al., Proc. 46th Autumn Meeting of the Japan Soc. Appl. Phys., Kyoto, Japan 108 (1985)Google Scholar
22. Itozaki, H. et al., Presented at the 46th Autumn Meeting of the Japan Soc. Appl. Phys. 760 (1985)Google Scholar
23. Yukimoto, Y. et al., Presented at the 33rd Spring Meeting of the Japan Soc. Appl. Phys., China, Japan (1986)Google Scholar
24. Tsuda, S. et al., J. Non-Cryst. Solids 77&78, 1465 (1985)Google Scholar
25. Muramatsu, S. et al., Jpn. J. Appl. Phys. 24 L744 (1985)Google Scholar
26. Sato, K. et al., J. non-Cryst. Solids. 77&78 421 (1985)Google Scholar
27. Tawada, Y. et al., Proc. 18th IEEE Photovol. Spec. Conf., Las Vegas, 1985 (in press)Google Scholar
28. Ohsawa, M. et al., J. Non-Cryst. Solids 77&78 401 (1985)Google Scholar
29. Nakamura, G. et al., Proc. SERI/DOE Amorphous silicon Subcontractors Annual Review Meeting, Washington 149 (1985)Google Scholar
30. Kiyama, S. et al., Presented at the 33rd Spring Meeting of the Japan Soc. Appl. Phys., Chiba, Japan (1986)Google Scholar
31. Maruyama, K. et al., Proc. 18th IEEE Photovol. Spec. Conf., Las Vegas, 1985 (in press)Google Scholar