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Recent Pollution Prevention Research In III-V Device Manufacturing At Hewlett-Packard

Published online by Cambridge University Press:  15 February 2011

Douglas B. Shire
Douglas B. Shire*
Affiliation:
Hewlett-Packard Company, Optoelectronics Division, 370 West, Trimble Road, M/S 91-ML, San Jose, CA 95131-1008 USA
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Abstract

Several coordinated hazardous waste minimization projects have been undertaken at our facilities involved in III-V device manufacturing. These include modifications to existing processes to reduce or eliminate emissions of CFCs, 1,1,1-TCA, xylenes, ethylene glycol ethers, 1,2,4-trichlorobenzene (in photoresist stripper), and other compounds. These issues are addressed in turn, noting the unique aspects of GaAs and GaP device manufacture that need to be taken into account. Goals achieved have been complete cessation of CFC and 1,1,1-TCA use and 33% reductions in xylene and 1,2,4-trichlorobenzene usage since 1990, despite significant increases in total production volume during the same time period. Specific strategies are also described for tracking chemical use and sharing best practices for hazardous waste reduction across functional groups.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 344: Symposium I – Materials and Processes for Environmental Protection , 1994 , 259
Copyright
Copyright © Materials Research Society 1994

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References

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