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“Recovery” Effect of Electron Induced Damage in 4H-SiC Schottky Diodes

Published online by Cambridge University Press:  01 February 2011

A. Castaldini ,
A. Cavallini ,
L. Rigutti ,
F. Nava ,
P.G. Fuochi  and
P. Vanni
A. Castaldini
Affiliation:
INFM and Dipartimento di Fisica, Università di Bologna, Bologna, IT
A. Cavallini
Affiliation:
INFM and Dipartimento di Fisica, Università di Bologna, Bologna, IT
L. Rigutti
Affiliation:
INFM and Dipartimento di Fisica, Università di Bologna, Bologna, IT
F. Nava
Affiliation:
INFN and Istituto di Fisica, Università di Modena e Reggio Emilia, Modena, IT
P.G. Fuochi
Affiliation:
Istituto CNR-ISOF, Bologna, IT
P. Vanni
Affiliation:
INFN and Istituto di Fisica, Università di Modena e Reggio Emilia, Modena, IT
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Abstract

The effects of electron irradiation on the defects associated electronic levels in Schottky diodes on 4H silicon carbide epilayers grown by chemical vapour deposition were investigated by Deep Level Transient Spectroscopy (DLTS) and Capacitance-Voltage (C-V) characteristics. These investigations were performed before and after irradiation with 8.6 MeV electrons at different doses. After irradiation four new traps with enthalpies equal to (Ec-0.23 eV), (Ec-0.39 eV), (Ec-0.63 eV) and (Ec-0.75 eV) were detected. Their thermal stability, a key point to determine their structure on the basis of recent theoretical and experimental results, was carefully investigated since it was earlier observed that during DLTS temperature runs up to 500 K a slight but significant recovery of a few irradiation-induced levels occurs. This effect was previously observed in literature for the level (Ec-0.70 eV) after thermal treatment at 500 °C [1], but the present results indicate that it involves more than a single level and is also effective at lower temperature. DLTS analyses were also performed from room temperature to liquid nitrogen temperature and vice versa up to 500 K.The annealing kinetics is reported and a few conclusions on the structure of the defects involved in the recovery are drawn. The correlation with the diode charge collection efficiency is also reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 792: Symposium R – Radiation Effects and Ion Beam Processing of Materials , 2003 , R10.6
Copyright
Copyright © Materials Research Society 2004

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References

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