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Recovery of Structural Defects in GaN After Heavy Ion Implantation

Published online by Cambridge University Press:  10 February 2011

C. Running ,
M. Dalmer ,
M. Deicher ,
M. Restle ,
M. D. Bremser ,
R. F. Davis  and
H. Hofsäss
C. Running
Affiliation:
Universität Konstanz, Fakultät für Physik, Postfach 5560, D-78434 Konstanz, Germany
M. Dalmer
Affiliation:
Universität Konstanz, Fakultät für Physik, Postfach 5560, D-78434 Konstanz, Germany
M. Deicher
Affiliation:
Universität Konstanz, Fakultät für Physik, Postfach 5560, D-78434 Konstanz, Germany
M. Restle
Affiliation:
Universität Konstanz, Fakultät für Physik, Postfach 5560, D-78434 Konstanz, Germany
M. D. Bremser
Affiliation:
Universität Konstanz, Fakultät für Physik, Postfach 5560, D-78434 Konstanz, Germany
R. F. Davis
Affiliation:
Universität Konstanz, Fakultät für Physik, Postfach 5560, D-78434 Konstanz, Germany
H. Hofsäss
Affiliation:
Universität Konstanz, Fakultät für Physik, Postfach 5560, D-78434 Konstanz, Germany
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Abstract

Single crystalline GaN-layers were implanted with radioactive 111In ions. The lattice location of the ions and the recovery of the implantation induced damage was studied using the emission channeling technique and perturbed-γγ-angular-correlation spectroscopy as a function of the annealing temperature. We find the majority of indium atoms on substitutional sites even directly after room temperature implantation, but within a heavily disturbed surrounding. During isochronal annealing treatments in vacuum, a gradual recovery of the implantation damage takes place between 873 K and 1173 K. After 1173 K annealing about 50 % of the In atoms occupy substitutional lattice sites with defect free surroundings.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 468: Symposium D – Gallium Nitride and Related Materials II , 1997 , 407
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Wilson, R.G., Pearton, S.J., Abemathy, C.R., and Zavada, J.M., Appl. Phys. Lett. 66, 2238 (1995).Google Scholar
2. Wilson, R.G., Vartuli, C.B., Pearton, S.J., Abemathy, C.R., and Zavada, J.M., Sol. St. Elec. 38, 1329 (1995).Google Scholar
3. Zolper, J.C., Wilson, R.G., Pearton, S.J., and Stall, R.A., Appl. Phys. Lett. 68, 1945 (1996).Google Scholar
4. Pearton, S.J., Vartuli, C.B., Zolper, J.C., Yuan, C., and Stall, R.A., Appl. Phys. Lett. 67, 1435 (1995).Google Scholar
5. Rubin, M., Newman, N., Chan, J.S., Fu, T.C., and Ross, J.T., Appl. Phys. Lett. 64, 64 (1994).Google Scholar
6. Chan, J.S., Cheung, N.W., Schloss, L., Jones, E., Wong, W.S., Newman, N., Liu, X., Weber, E.R., Grassman, A., Rubin, M.D., Appl. Phys. Lett. 68, 2702 (1996).Google Scholar
7. Zolper, J.C., Shul, R.J., Baca, A.G., Wilson, R.G., Pearton, S.J., and Stall, R.A., Appl. Phys. Lett. 68, 2273 (1996).Google Scholar
8. Pelzmann, A., Strite, S., Dommann, A., Kirchner, C., Kamp, M., Ebeling, K. J., Nazzal, A., MRS Internet J. Nitride Semicond. Res. 2, 4 (1997).Google Scholar
9. Tan, H.H., Williams, J.S., Zou, J., Cockayne, D.J.H., Pearton, S.J., and Stall, R.A., Appl. Phys. Lett. 69, 2364(1996).Google Scholar
10. Parikh, N., Suvkhanov, A., and Lioubtchenko, M., Carlson, E., Bremser, M.D., Bray, D., Hunn, J., and Davis, R.F., to be published in Nucl. Instr. Instr. & Meth. B (1997).Google Scholar
11. Weeks, T.W. Jr, Bremser, M.D., Ailey, K.S., Carlson, E.P., Perry, W.G., Davis, R.F., Appl. Phys. Lett. 67, 401 (1995).Google Scholar
12. Weeks, T.W. Jr, Bremser, M.D., Ailey, K.S., Carlson, E.P., Perry, W.G., Davis, R.F., J. Mat. Res. 11, 1011(1996).Google Scholar
13. Ziegler, J.F., Biersack, J.P., and Littmark, U., The stopping and ranges of ions in solids. (Pergamon Press, New York, 1985).Google Scholar
14. Hofsäss, H., Hyp. Int. 97/98, 247 (1996); Phys. Rep. 201, 121 (1991).Google Scholar
15. Wiehert, T. et al., Appl. Phys. A 48, 59 (1989); inGoogle Scholar
Hyperfine Interactions of Defects in Semiconductors, ed. by Langouche, G. (Elsevier, Amsterdam 1992) p. 77ff.Google Scholar
16. Hofsäss, H., Wahl, U., and Jahn, S.G., Hyp. Int. 84, 123 (1991).Google Scholar
17. Magerle, R., Deicher, M., Desnica, U., Keller, R., Pfeiffer, W., Pleiter, F., Skudlik, H., Wiehert, T., Appl. Surf. Sci. 50, 159 (1991).Google Scholar
18. Burchard, A., Deicher, M., Forkel-Wirth, D., Haller, E.E., Magerle, R., Prospero, A., and Stötzler, A., to be published and submitted to ICDS 19.Google Scholar