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Recrystallization of Si-, As- And BF2-Implanted, Bonded SOI

Published online by Cambridge University Press:  10 February 2011

M. Tamura  and
M. Horiuchi
M. Tamura
Affiliation:
Joint Research Center for Atom Technology (JRCAT)-Angstrom Technology Partnership (ATP), 1-1-4 Higashi, Tsukuba, Ibaraki 305, Japan
M. Horiuchi
Affiliation:
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185, Japan
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Abstract

Conventional and high-resolution cross-sectional TEM observations have been carried out on Si-, As- and BF2-implanted, bonded 100-nm-thick (001) SOI layers having polycrystalline Si (poly-Si) masks followed by annealing at 600°C. Amorphized SOI layers by these ion implantations are recrystallized through lateral solid-phase seeding epitaxy (L-SPE) by single crystal SOI under the poly-Si mask as a seed. The recrystallization of these SOI layers is completed in the order of BF2-, Si- and As-implanted layers by <110>-directed L-SPE, although the recrystallized layers have a high-density of {111}twins due to {111} facet formation at the growth front occurring during the first 30 s of annealing, independent of implanted ions. On the other hand, in the case of <100>-directed L-SPE, the growth of {110} faceted regions progresses after annealing for a few tens of minutes before folded {111} facets are formed, resulting in a good crystal quality region of 0.1∼0.2μm remaining, measured from the mask edge.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 481: Symposium P – Science and Technology of Semiconductor Surface Preparation , 1997 , 465
Copyright
Copyright © Materials Research Society 1998

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References

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