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Reduced Amorphization of Ion-Milled Silicon Cross-Section Transmission Electron Microscope Samples by Dynamic Annealing During Milling.

Published online by Cambridge University Press:  21 February 2011

D. Bahnck  and
R. Hull
D. Bahnck
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
R. Hull
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
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Abstract

We have developed an experimental apparatus for heating samples in the temperature range 50–400°C during ion milling. We find that heating to temperatures > 250°C during milling greatly reduces ion sputtering amorphization of the sample surfaces, due to dynamic reannealing of point defects. This allows thinner regions of crystalline sample to be imaged, without the signal being swamped by noise due to milling amorphization. At temperatures ≥300°C, however implantation defects am formed. We discuss the advantages of this technique for high resolution imaging.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 254: Symposium W – Specimen Preparation for Transmission Electron Microscopy of Materials III , 1991 , 249
Copyright
Copyright © Materials Research Society 1992

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References

1. See, for example, Dearnaley, G., Nelson, R.S., Freeman, J.H. and Stephens, J., Ion Implantation in Semiconductors (North Holland, London, 1973)Google Scholar
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