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Reduction of Neutral Dangling Bond Density by Light Soaking in Nanocrystalline Silicon

Published online by Cambridge University Press:  10 February 2011

Takahiro Matsumoto ,
Yasuaki Masumoto  and
Michio Kondo
Takahiro Matsumoto
Affiliation:
Single Quantum Dot Project, ERATO, Japan Science and Technology Corporation, 5-9-9 Tokodai, Tsukuba 300-26, Japan, tomato@sqdp.trc-net.co.jp
Yasuaki Masumoto
Affiliation:
Single Quantum Dot Project, ERATO, Japan Science and Technology Corporation, 5-9-9 Tokodai, Tsukuba 300-26, Japan, tomato@sqdp.trc-net.co.jp
Michio Kondo
Affiliation:
Electrotechnical Laboratory, Tsukuba 305, Japan
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Abstract

The effects of light exposure on neutral defect density at the surface of nanocrystalline Si are investigated by electron-spin resonance (ESR) experiments. A decrease of the neutral dangling bond density by light soaking was observed in this nanostructure. The reduction rate of ESR signal intensity becomes large with increasing light exposure intensity, and the reduction occurs from the excitation energy higher than 2 eV in vacuum. The reduction of the defect density can be explained in terms of the conversion of neutral states to charged states by carrier trapping.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 747
Copyright
Copyright © Materials Research Society 1998

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References

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