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Reflection High-Energy-Electron Diffraction Study of Inp and InAs (100) In Gas-Source Molecular Beam Epitaxy

Published online by Cambridge University Press:  25 February 2011

T. P. Chin ,
B. W. Liang ,
H. Q. Hou  and
C. W. Tu
T. P. Chin
Affiliation:
Department of Electrical and Computer Engineering 0407, University of California at San Diego, La Jolla, California 92093-0407, U. S. A.
B. W. Liang
Affiliation:
Department of Electrical and Computer Engineering 0407, University of California at San Diego, La Jolla, California 92093-0407, U. S. A.
H. Q. Hou
Affiliation:
Department of Electrical and Computer Engineering 0407, University of California at San Diego, La Jolla, California 92093-0407, U. S. A.
C. W. Tu
Affiliation:
Department of Electrical and Computer Engineering 0407, University of California at San Diego, La Jolla, California 92093-0407, U. S. A.
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Abstract

InP and InAs (100) were grown by gas-source molecular-beam epitaxy (GSMBE) with arsine, phosphine, and elemental indium. Reflection high-energy-electron diffraction (RHEED) was used to monitor surface reconstructions and growth rates. (2×4) to (2×1) transition was observed on InP (100) as phosphine flow rate increased. (4×2) and (2×4) patterns were observed for In-stabilized and As-stabilized InAs surfaces, respectively. Both group-V and group-rn-induced RHEED oscillations were observed. The group-V surface desorption activation energy were measured to be 0.61 eV for InP and 0.19 eV for InAs. By this growth rate study, we are able to establish a precise control of V/HII atomic ratios in GSMBE of InP and InAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 216: Symposium T – Long-Wavelength Semiconductor Devices, Materials and Processes , 1990 , 517
Copyright
Copyright © Materials Research Society 1991

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References

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