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Relaxation Measurements of the Persistent Photoconductivity in Sulfur-Doped a-Si:H.

Published online by Cambridge University Press:  10 February 2011

D. Quicker  and
J. Kakalios
D. Quicker
Affiliation:
School of Physics and Astronomy, University of Minnesota, Minneapolis MN 55455
J. Kakalios
Affiliation:
School of Physics and Astronomy, University of Minnesota, Minneapolis MN 55455
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Abstract

The slow relaxation of the persistent photoconductivity (PPC) effect in sulfur-doped hydrogenated amorphous silicon (a-Si:H) has been measured as a function of temperature and illumination time. The relaxation is found to be thermally activated, with an activation energy which varies with sulfur concentration, while illuminating the film for a longer time leads to a longer relaxation time. A correlation is observed between changes of the photoconductivity during illumination and the magnitude of the PPC effect following illumination. These effects are also observed in compensated a-Si:H, suggesting that the mechanism for the PPC effect is the same in both sulfur-doped a-Si:H and compensated a-Si:H. The presence of donor and compensating acceptor states in sulfur-doped a-Si:H could arise from valence alternation pair sulfur atom defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 611
Copyright
Copyright © Materials Research Society 1996

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