Hostname: page-component-68945f75b7-6rp8b Total loading time: 0 Render date: 2024-09-04T12:26:57.290Z Has data issue: false hasContentIssue false
  • English
  • Français

Reliability of Carbon Doped Base AlGaAs/GaAs HBTs as a Function of Collector Current

Published online by Cambridge University Press:  22 February 2011

S.J. Prasad  and
E. Hultine
S.J. Prasad
Affiliation:
Electronics Research Labs Tektronix, MS 50-223, Beaverton, OR 97077, USA
E. Hultine
Affiliation:
Electronics Research Labs Tektronix, MS 50-223, Beaverton, OR 97077, USA
Get access

Abstract

The HBTs used in this study were grown by OMVPE. The base was carbon doped to 3×1019 cm−3 and the base thickness was 500Å. Several 3μ ×10μ HBTs were biased at Ic =2,4 and 10mA (VCE=2V) and maintained at TA=125°C. Based on 1000 hours of operation at 125°C, Ic =2mA is safe, Ic =4mA is marginal and Ic =10mA is fatal.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 300: Symposium D1 – III-V Electronic and Photonic Device Fabrication and Performance , 1993 , 609
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Yamada, F.M. et al. , “Reliability Analysis of Microwave GaAs/AlGaAs HBTs with Beryllium and Carbon doped Base”, paper U4 presented at the 1992 IEEE MTT Symposium, Albuquerque, NM, June 1-5,1992, Technical Digest, pp 739–742.Google Scholar
2. Ren, F. et al. , “Stability of Carbon and Beryllium doped base GaAs/A1GaAs Heterojunction Bipolar Transistors”, Applied Physics Letters, 59(27), pp 3613–3615, 1991.Google Scholar
3. Prasad, S.J. et al. , “High Performance AlGaAs/GaAs HBT IC Technology”, SPIE High-Speed Electronics and Optoelectronics Proceedings, Vol 1680, pp 12–26, March 1992.Google Scholar
4. Streit, D.C. et al. , “High-Reliability GaAs-AlGaAs HBTs by MBE with Be Base Doping and InGaAs Emitter Contacts”, IEEE Electron Device Letters, 12(9), pp 471–473,1991.Google Scholar