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Reliable InGaAsP/GaAs 40W lasers grown in solid source MBE with phosphorus-cracker

Published online by Cambridge University Press:  15 March 2011

G. K. Kuang ,
I. Hernandez ,
M. McElhinney ,
L. Zeng ,
B. Caliva  and
R. Walker
G. K. Kuang
Affiliation:
Lasertel Inc., 7775 N. Casa Grande Hwy, Tucson, AZ-85743
I. Hernandez
Affiliation:
Lasertel Inc., 7775 N. Casa Grande Hwy, Tucson, AZ-85743
M. McElhinney
Affiliation:
Lasertel Inc., 7775 N. Casa Grande Hwy, Tucson, AZ-85743
L. Zeng
Affiliation:
Lasertel Inc., 7775 N. Casa Grande Hwy, Tucson, AZ-85743
B. Caliva
Affiliation:
Lasertel Inc., 7775 N. Casa Grande Hwy, Tucson, AZ-85743
R. Walker
Affiliation:
Lasertel Inc., 7775 N. Casa Grande Hwy, Tucson, AZ-85743
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Abstract

Laser structures with InGaAsP quantum well were grown on GaAs substrates in a solid source MBE system. Threshold current density Jth as low as 290A/cm2 and slope efficiency as high as 0.68W/A per facet were obtained for uncoated laser chips at 25°C. After 857 hours burn-in at 47A (corresponding to around 47W) at room temperature, power degradation rate was measured to be less than 3×10−6/h.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 817: Symposium L – New Materials for Microphotonics , 2004 , L9.1
Copyright
Copyright © Materials Research Society 2004

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