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Reproducible Resistance Switching in Ni/NiO/Ni Trilayer
Published online by Cambridge University Press: 01 February 2011
Abstract
The resistance random access memory is attracting much attention as a high-density and high-speed non-volatile memory, having large resistance switching ration and good affinity with the conventional CMOS technologies. We demonstrate the resistance switching in the NiO thin film without using Pt electrode.
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- Research Article
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- Copyright © Materials Research Society 2007
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