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Residual Stress in GaAs Layer Grown on 4°-Off (100)Si by MBE

Published online by Cambridge University Press:  28 February 2011

T. Yao ,
Y. Okada ,
H. Kawanami ,
S. Matsui ,
A. Imagawa  and
K. Ishida
T. Yao
Affiliation:
Electrotechnical Laboratory, Sakura-mura, Ibaraki 305, Japan
Y. Okada
Affiliation:
Electrotechnical Laboratory, Sakura-mura, Ibaraki 305, Japan
H. Kawanami
Affiliation:
Electrotechnical Laboratory, Sakura-mura, Ibaraki 305, Japan
S. Matsui
Affiliation:
Electrotechnical Laboratory, Sakura-mura, Ibaraki 305, Japan Science University of Tokyo, Noda, Chiba 278, Japan
A. Imagawa
Affiliation:
Electrotechnical Laboratory, Sakura-mura, Ibaraki 305, Japan Science University of Tokyo, Noda, Chiba 278, Japan
K. Ishida
Affiliation:
Electrotechnical Laboratory, Sakura-mura, Ibaraki 305, Japan Science University of Tokyo, Noda, Chiba 278, Japan
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Abstract

Residual stress in molecular beam epitaxially (MBE) grown GaAs films on 4°-off (100)Si substrates is investigated with X-ray diffraction technique. It is experimentally confirmed that the GaAs lattice suffers tetragonal deformation with the c-axis being [100]. The GaAs lattice tilts by approximately 0.2° towards the tilted direction of the substrate. It is found that two-dimensional compressive stress dominates in GaAs films thinner than 0.3 μm in thickness, while two-dimensional tensile stress dominates in thicker films. The variation of the stress is understood in terms of a combination of misfit stress and thermal stress. The residual tensile stress is larger than 1 × 109 dyn/cm2 in the films thicker than I pm. The effect of the stress on the reliability of semiconductor laser diodes is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987 , 63
Copyright
Copyright © Materials Research Society 1987

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