Hostname: page-component-77c89778f8-m8s7h Total loading time: 0 Render date: 2024-07-16T19:31:43.455Z Has data issue: false hasContentIssue false
  • English
  • Français

Reverse Recovery and Decay of Stored Excess Carriers in a-SI:HP-I-N Diode

Published online by Cambridge University Press:  21 February 2011

Daxing Han ,
Keda Wang  and
Marvin Silver
Daxing Han
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599–3255, USA
Keda Wang
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599–3255, USA
Marvin Silver
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599–3255, USA
Get access

Abstract

Carrier transport properties, including mobility and carrier lifetimes, or the mobility-lifetime-product, are important parameters for the understanding of the electronic properties of amorphous silicon devices. We have attempted to study these parameters by the junction recovery method which is useful in crystal p-i-n devices, and by the decay of the forward and reverse bias current with varying periods of zero bias delays after removal of the forward bias. We found that the current decay by the standard reverse bias recovery is much faster than that due to the decay under zero bias. In this paper we present our experimental results. We conclude that the true decay of the stored charged due to forward bias is much longer and consequently, the stored charge is much larger than that suggested by standard reverse recovery experiments.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 837
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Hoffman, A. and Schuster, K., Sol. State Elect. 7, 717 (1964).Google Scholar
2. Benda, H., Hoffman, A. and Spenke, E., Sol. State Elect. 8, 887 (1965).CrossRefGoogle Scholar
3. Antoniadis, H. and Schiff, E. A., J. Non-Cryst. Sol, 137/138 435 (1991).CrossRefGoogle Scholar
4. Silver, M., Giles, N.C. and Snow, E., Appl. Phys. Lett. 41, 935 (1982).CrossRefGoogle Scholar
5. Silver, M., Snow, E. and Aiga, A., J. Non. Cryst. Sol. 59/60 445 (1983).Google Scholar
6. Konenkamp, R., Hermann, A. M. and Madan, A., Appl. Phys. Lett. 46, 405 (1985); Non-Cryst. Solids 66, 249 (1984).CrossRefGoogle Scholar
7. Wang, K., Han, D., Kemp, M. and Silver, M., J. Non-Cryst. Sol. 137/138 599 (1991).Google Scholar
8. Han, D., Wang, K. and Silver, M., J. Non-Cryst. Sol. 137/138 267 (1991).Google Scholar
9. Hack, M. and den Boer, W., J. Appl. Phys. 58, 1554 (1985);Google Scholar
Hack, M. and Shur, M., J. Appl. Phys. 58, 997 (1985).CrossRefGoogle Scholar
10. Lampen, M. and Mark, P., Current injection in Solids, (Academic Press, New york, 1970).Google Scholar
11. Silver, M. and Cannella, V., J. Non-Cryst Solids, 97/98 305 (1987).CrossRefGoogle Scholar
12 Shapiro, F. R., Bar-Yam, Y., and Silver, M., IEEE Trans, on Electron Devices, 36, 2785 (1989).CrossRefGoogle Scholar
13. Zvanut, M. E., Han, Daxing, Wang, Keda and Silver, M., MRS spring meeting proc. 305 192 (1990).Google Scholar
14. Schiff, E. A. (private communication).Google Scholar
15. Crandall, R. S. (private communication).Google Scholar