Hostname: page-component-7bb8b95d7b-495rp Total loading time: 0 Render date: 2024-10-04T05:14:45.906Z Has data issue: false hasContentIssue false
  • English
  • Français

Rf Magnetron Sputter Deposition and Characterization of Aluminum Nitride thin Films

Published online by Cambridge University Press:  26 February 2011

Saluru B. Krupanidhi
Saluru B. Krupanidhi*
Affiliation:
Motorola Inc., Albuquerque, NM 87109
Get access

Abstract

Highly crystalline and resistive thin films of aluminum nitride have been rf magnetron sputter deposited. The films were characterized in terms of structure, electrical and optical properties. A perfect c-axis orientation along (002) direction was obtained, in the reactive sputtered films from a metal target, keeping the substrates as low as 350°C. The structural and electrical properties were observed to be sensitive to deposition conditions. It has also been observed that the combination of higher powers and low sputtering pressures, exposed the films to high energy neutral ion bombardment. A correlation between deposition parameters and the physical properties is presented.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 399
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Morita, M., Uesugi, N., Isogai, S., Tsubouchi, K. and Mikoshiba, N., Jpn. J. Appl. Phys., 20, 17, (1981)Google Scholar
2. Shiosaki, T., Yamamoto, T., Oda, T. and Kawabata, A., Appl. Phys. Lett, 36, 643 (1980)CrossRefGoogle Scholar
3. Este, G., Surridge, R. and Westwood, W.D., J. Vac. Sci. Tech, (A), 4, 989 (1986)CrossRefGoogle Scholar
4. Liu, J. K., Lakin, K. M. and Wang, K. L., J. Appl. Phys., 46, 3703 (1975)Google Scholar
5. Shuskus, A. J., Reeder, T. M. and Paradis, E. C., App. Phys. Lett., 24, 155 (1974)Google Scholar
6. Yoshida, S., Misawa, S., Fujii, Y., Tagada, S., Hayakawa, H., Gunda, S. and Itoh, A., J. Vac. Sci. Tedinoli. 16, 990 (1979)Google Scholar
7. Tominaga, K., Iwamura, S., Shintani, Y. and Tada, O. O., Jpn. J. Appl. Phys. 22, 3, 418 (1983)Google Scholar
8. Krupanidhi, S. B. and Sayer, M., J. Appl. Phys. 56, 3308 (1984)Google Scholar