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RF Sputter Deposition of Indium Oxide / Indium Iron Oxide Thin Films for Photoelectrochemical Hydrogen Production

Published online by Cambridge University Press:  31 January 2011

William B Ingler
Affiliation:
william.ingler@utoledo.edu, University of Toledo, Physics and Astronomy, 43606, Ohio, United States
Abbasali Naseem
Affiliation:
abbasali.naseem@utoledo.edu, University of Toledo, Physics and Astronomy, 43606, Ohio, United States
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Abstract

This project focuses on using indium oxide and indium iron oxide as an alloy to make a protective thin film (transparent, conductive, and corrosion resistant or TCCR) for amorphous silicon based solar cells, which are used in immersion-type photoelectrochemical cells for hydrogen production. From the work completed, the results indicate that samples made at 250 °C with 30 Watt of indium and 100 Watt of indium iron oxide, and a sputter deposition time of ninety minutes produced optimal results when deposited directly on single junction amorphous silicon solar cells. At 0.65 Volts, the best sample displays a maximum current density of 21.4 mA/cm2.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

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References

1 Ingler, W. B. Jr. and Khan, S. U. M., Thin Sol. Films. 2004. p. 301308.Google Scholar
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