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Rheed Oscillation During the Epitaxial Growth of Layered Materials

Published online by Cambridge University Press:  22 February 2011

Toshihiro Shimada ,
Fumio S. Ohuchi  and
Atsushi Koma
Toshihiro Shimada
Affiliation:
Department of Chemistry, the University of Tokyo Hongo 7-3-1, Bunkyo-ku, Tokyo, JAPAN 11 3 Central Research and Development, E.I. DuPont de Nemours & Co. Inc. Experimental Station, Wilmington, DE19880-0356
Fumio S. Ohuchi
Affiliation:
Central Research and Development, E.I. DuPont de Nemours & Co. Inc. Experimental Station, Wilmington, DE19880-0356
Atsushi Koma
Affiliation:
Department of Chemistry, the University of Tokyo Hongo 7-3-1, Bunkyo-ku, Tokyo, JAPAN 11 3
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Abstract

RHEED intensity oscillations have been observed during the epitaxial growth of layered NbSe2, MoSe2 on GaAs(111) substrates. Monolayer- and bilayer- mode oscillations have been observed at different diffraction points. The existence of bilayer-mode oscillation is interpreted as showing the polytype of the grown films. The present report demonstrate the utility of RHEED oscillation for analyzing the structure of ultrathin films of layered materials. The epitaxial growth of TaSe2 on layered substrates is also reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 208: Symposium J – Advances in Surface and Thin Film Diffraction , 1990 , 47
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Harris, J.J., Joyce, B.A., Dobson, P.J., Surf. Sci. 103,L90 (1981).Google Scholar
2. Sakamoto, T., Kawai, N.J., Nakagawa, T., Ohta, K., Kojima, T., Appl. Phys. Lett. 47,741 (1985)Google Scholar
3. Koma, A., Sunouchi, K., Miyajima, T., Microelec.Eng. 2,129 (1984) J.Vac.Sci.&Technol. B 3,603 (1985)Google Scholar
4. Ueno, K., Shimada, T., Saiki, K., Koma, A., Appl.Phys.Lett. 56,327 (1990)Google Scholar
5. Friend, R.H. and Yoffe, A.D., Adv.Phys. 36,1 (1987)Google Scholar
6. Wilson, J.A. and Yoffe, A.D., Adv.Phys. 18,193 (1969)Google Scholar
7. Shimada, T., Yamamoto, H., Saiki, K., Koma, A., Jpn. J. Appl. Phys. 1990 (in print)Google Scholar