Hostname: page-component-7479d7b7d-t6hkb Total loading time: 0 Render date: 2024-07-11T12:23:25.187Z Has data issue: false hasContentIssue false

The Role of Ions for the Deposition of Hydrocarbon Films, investigated by In-Situ Ellipsometry

Published online by Cambridge University Press:  21 February 2011

A. Von Keudell*
Affiliation:
Max-Planck-Institut fur Plasmaphysik, EURATOM association Boltzmannstr.2, 85748 Garching, Germany
Get access

Abstract

The growth mechanisms for the deposition of hydrocarbon films (C:H-films) from a methane electron cyclotron resonance (ECR) plasma are investigated by means of in-situ ellipsometry. Ion bombardment during plasma-enhanced chemical vapor deposition of hydrocarbon films mainly governs the properties of the films and the total growth rate. the role of ions for the growth rate and the film properties is discussed in this paper. Films were deposited with varying RF-bias, resulting in a DC self-bias ranging from floating potential up to 100 V. the ion-induced modification of the film properties was investigated by a new technique using a double layer consisting of a polymer-like film with low optical absorption and a hard carbon film with high absorption on top. the interface between these layers was analysed after deposition by a layer-by-layer etching in an oxygen plasma at floating potential. From these data it is possible to determine with high accuracy the range of the ion-induced modification of the optical properties in the underlying polymer-like film. the thickness of this modified layer ranges from 6 Å at 30 V self-bias to 40 Å at 100 V self-bias, which is consistent with the range of hydrogen ions in polymerlike films as calculated by the computer code TRIM.SP.

Based on the presented results, the growth of C:H-films and the resulting film properties can be modelled by the growth at activated sites at the film surface. these activated sites are represented by dangling bonds, induced by the ion bombardment. they also show up in the ellipsometric results during the deposition of C:H-films by a change of the optical response of the film surface.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Angus, J.C., Koidl, P. and Domitz, S. in: ‘Plasma deposited thin films’, edited by Jansen, J. Mort and F. (CRC Press, Boca Raton, 1986), p. 89 Google Scholar
2 Catherine, Y., Materials Science Forum 52&53, 175 (1989)Google Scholar
3 Bootsma, G. A., Meyer, F., Surf. Sci. 14, 52 (1969)Google Scholar
4 H.Sugai, , Kojima, H., Ishida, A., Toyoda, H., Appl. Phys. Lett. 56, 2616 (1990)Google Scholar
5 Catherine, Y., Couderc, P., Thin Solid Films 144, 265 (1986)Google Scholar
6 A, J. Biener.. Schenk, Winter, B., Kiippers, J., Electr, J.. Spectr. Rel. Phen., 64/65, 331, (1993)Google Scholar
7 Lange, K., Jacob, W., Möller, W., Proc. 11th int. Symp. on Plasma Chemistry, ed. by J.E.Harry, (IUPACV 1993), p. 1266 Google Scholar
8 v, A..Keudell, Möller, W., Hytry, R., Appl. Phys. Lett. 62, 937 (1993)Google Scholar
9 v, A..Keudell, Möller, W., J. appl. Phys. 75, 7718 (1994)Google Scholar
10 Möller, W., Appl. Phys. a 56, 527 (1993)Google Scholar
11 Engelhard, M., Jacob, W., Möller, W., Koch, A., Proc. 11th int. Symp. on Plasma Chemistry, ed. by J.E.Harry, (IUPACV 1993), p. 1382 Google Scholar
12 Horn, A., Schenk, A., Biener, J., Winter, B., Lutterloh, C., Wittmann, M., Küppers, J., Chem. Phys. Lett. 231,193 (1994)Google Scholar
13 W, Möller, Fukarek, W., Lange, K., Keudell, A. v., Jacob, W., Jap. J. appl. Phys. (in press)Google Scholar
14 Koidl, P., Wild, Ch., Dischler, B., Wagner, J., Ramsteiner, M., Materials Science Forum 52&53, 41(1989)Google Scholar
15 W.Jacob, , Môller, W., Appl. Phys. Lett. 63, 1771 (1993)Google Scholar
16 Angus, J.C., Thin Solid Films 142, 145 (1986)Google Scholar
17 Weiler, M., Sattel, S., Jung, K., Ehrhardt, H., Veerasamy, V.S., Robertson, J., Appl. Phys. Lett. 64, 2797 (1994)Google Scholar
18 Lifshitz, Y., S.R.Kasi, Rabalais, J.W., Eckstein, W., Phys. Rev. B 41, 10468 (1990)Google Scholar
19 Robertson, J., Diam. Rel. Mater. 2, 984 (1993)Google Scholar
20 Robertson, J., Phil. Trans. R. Soc. Lond. a 342, 277 (1993)Google Scholar
21 Collins, R.W., Materials Science Forum 52& 53, 342 (1989)Google Scholar
22 Jellison, G.E., Burke, H.H., J. appl. Phys. 60, 841 (1986)Google Scholar
23 Kroesen, G.M.W., Oehrlein, G.S., Bestwick, T.D., J. appl. Phys. 69, 3390 (1991)Google Scholar
24 Aspnes, D.E., Studna, A.A., appl. Opt. 14, 220 (1975)Google Scholar
25 Hauge, P.S., Surface Science 96, 108 (1980)Google Scholar
26 Collins, R.W., Rev. Sci. INstrum. 61, 2029 (1990)Google Scholar
27 de Nijs, M.M., Holtslag, A.H.M., A. Hoeksta and A. van Silfhout, J. Opt. Soc. am. a5, 1466 (1988)Google Scholar
28 Fukarek, W., von Keudell, A., Rev. Sci. INstrum. (in press)Google Scholar
29 Möller, W. in 'Materials modification by high fluence ion beams', edited by Kelly, R. and da, M.F. Silva, NATO aSI Series E, 155, (Kluwer academic Publishers, Dordrecht (1989), p. 151 Google Scholar
30 Eckstein, W., ‘Computer Simulation of Ion Solid interactions’, Springer Series in Materials Science, 10 (Springer-Verlag, Berlin, Heidelberg 1991)Google Scholar
31 Möller, W. and B.Scherzer, M.U., Appl. Phys. Lett. 63,1870 (1987)Google Scholar
32 Mott, N.F., Davis, E.A., 'Electronic Processes in Non-Crystalline Materials', Oxford Univ. Press 2nd ed. (1979)Google Scholar
33 Robertson, J., Materials Science Forum 52& 53, 125 (1989)Google Scholar