Hostname: page-component-5c6d5d7d68-sv6ng Total loading time: 0 Render date: 2024-08-17T17:26:44.529Z Has data issue: false hasContentIssue false
  • English
  • Français

Role of Teos in Improved Quality Pteos and O3-TEOS CVD SiO2 Films

Published online by Cambridge University Press:  25 February 2011

Mark A. Bourgeois ,
K. Ramkumar  and
Arjun N. Saxena
Mark A. Bourgeois
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180–3590
K. Ramkumar
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180–3590
Arjun N. Saxena
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180–3590
Get access

Abstract

The effects of TEOS (Tetra-ethyl-ortho-silicate) concentration on the physical, chemical and electrical characteristics of undoped SiO2 films deposited by plasma (PECVD) and thermal CVD (ThCVD) processes, are described. It is shown that the (TEOS/O3) or (TEOS/O) ratio strongly influences the various film properties. The uniformity of film thickness is better at higher (TEOS/O3) or (TEOS/O2) ratios in both processes. In ThCVD the SiO2 films are denser (low etch rate) when deposited at low (TEOS/O3 ) ratio. This study has shown that the TEOS concentration can be used to tailor film properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 373
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)