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The Role of the a-Si:H Layer in Metal / a-Si:H / Metal Memory Structures

Published online by Cambridge University Press:  21 February 2011

I.S. Osborne ,
J. Hajto ,
M.J. Rose ,
A.J. Snell ,
P.G. Leœmber  and
A.E. Owen
I.S. Osborne
Affiliation:
Department of Applied Physics & Electrical and Manufacturing Engineering, University of Dundee, Dundee, DD1 4HN, Scotland, UK.
J. Hajto
Affiliation:
Department of Electrical Engineering, University of Edinburgh, EH9 3JL, Scotland, UK
M.J. Rose
Affiliation:
Department of Applied Physics & Electrical and Manufacturing Engineering, University of Dundee, Dundee, DD1 4HN, Scotland, UK.
A.J. Snell
Affiliation:
Department of Electrical Engineering, University of Edinburgh, EH9 3JL, Scotland, UK
P.G. Leœmber
Affiliation:
Department of Applied Physics & Electrical and Manufacturing Engineering, University of Dundee, Dundee, DD1 4HN, Scotland, UK.
A.E. Owen
Affiliation:
Department of Electrical Engineering, University of Edinburgh, EH9 3JL, Scotland, UK
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Abstract

In this paper we report the role of the a-Si:H on the electrical behaviour of Metal/ a-Si:H / Metal memory devices. We have investigated layers deposited at 250°C by the glow discharge method with various doping concentrations, from undoped up to 104vppm of either diborane or phosphine in silane. We have found that the a-Si:H layer affects the initial forming process and the subsequent OFF state resistance. The hydrogen contents of the films have been measured and are found to correlate, for the p-type samples, with the forming voltage.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 1169
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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