Hostname: page-component-77c89778f8-5wvtr Total loading time: 0 Render date: 2024-07-21T12:18:45.605Z Has data issue: false hasContentIssue false
  • English
  • Français

The Role of Vacancies and Dopants in Si Solid-Phase Epitaxial Crystallization

Published online by Cambridge University Press:  15 February 2011

C. M. Chen ,
S. Rassiga ,
T. Gessmann ,
M. P. Petkov ,
M. H. Weber ,
K. G. Lynn  and
H. A. Atwater
C. M. Chen
Affiliation:
Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, CAc 91125
S. Rassiga
Affiliation:
Dept of Physics, Washington State University, Pullman, WA 99164
T. Gessmann
Affiliation:
Dept of Physics, Washington State University, Pullman, WA 99164
M. P. Petkov
Affiliation:
Dept of Physics, Washington State University, Pullman, WA 99164
M. H. Weber
Affiliation:
Dept of Physics, Washington State University, Pullman, WA 99164
K. G. Lynn
Affiliation:
Dept of Physics, Washington State University, Pullman, WA 99164
H. A. Atwater
Affiliation:
Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, CAc 91125
Get access

Abstract

The role and interaction of vacancies and dopants in the crystallization of amorphous Si (a-Si) by solid-phase epitaxy (SPE) was investigated. To this end, we studied: (i) the solid-phase epitaxy rate measured by time-resolved reflectivity (TRR), (ii) the dopant and carrier concentrations measured by secondary ion mass spectrometry (SIMS) and spreading resistance (SR) analysis, and (iii) the vacancy concentration measured by positron annihilation spectroscopy (PAS). Phosphorus was implanted into a-Si on Si (001), which was previously amorphized by 29Si+ implantation, to create a nonuniform P doping profile. Phosphorus doped samples compensated with a similar boron profile were also studied. Samples were vacuum annealed for various times so that the amorphous-crystal interface was stopped at various depths providing frozen frames of the SPE process. These samples were then studied with PAS to investigate the vacancy population and to identify the impurity-defect complexes. Using this method, we have observed a population of phosphorus-vacancy complexes in the epitaxial layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 183
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Olson, G. L. and Roth, J. A., Handbook of Crystal Growth 3, edited by Hurle, D. T. J. (Elsevier, Amsterdam, 1994), pp. 257–312.Google Scholar
2. Lu, G. Q., Nygren, E., and Aziz, M. J., J. Appl. Physics 70, 5323 (1991).Google Scholar
3. Szeles, C. and Lynn, K. G., Encyclopedia of Applied Physics, Vol. 14 (VCH Publishers, 1996), pp. 607–632.Google Scholar
4. Ghosh, V. J., Alatalo, M., Asoka-Kumar, P., Lynn, K. G., and Kruseman, A. C., Appl. Surf. Sci. 116, 278 (1997).Google Scholar
5. Alatalo, M., Asoka-Kumar, P., Ghosh, V. J., Nielsen, B., Lynn, K. G., Kruseman, A. C., Veen, A. Van, and Puska, M. J., J. Phys. Chem. Solids 59, 55 (1998).Google Scholar
6. Petkov, M. P., Weber, M. H., Lynn, K. G., Crandall, R. S., Ghosh, V. J., Phys. Rev. Left. 82, (10 May 1999).Google Scholar
7. Xu, J., Roth, E. G., and Holland, O. W., Mills, A. P., Suzuki, R., Appl. Phys. Lett. 74, 997 (1999).Google Scholar