Hostname: page-component-78c5997874-v9fdk Total loading time: 0 Render date: 2024-11-18T04:23:53.366Z Has data issue: false hasContentIssue false
  • English
  • Français

Ruthenium as Schottky metal for SiC-based high temperature hydrogen sensors

Published online by Cambridge University Press:  26 February 2011

S. Basu ,
S. Roy  and
C. Jacob
S. Basu
Affiliation:
Materials Science Centre, Indian Institute of Technology, Kharagpur 721302, India
S. Roy
Affiliation:
Materials Science Centre, Indian Institute of Technology, Kharagpur 721302, India
C. Jacob
Affiliation:
Materials Science Centre, Indian Institute of Technology, Kharagpur 721302, India
Get access

Abstract

Sensor response characteristics of Ru/3C-SiC (epitaxial layer of SiC on Si substrates) Schottky junctions were studied at different temperatures (200 – 400 °C) in presence of varying concentrations of hydrogen from 5000 – 20000 ppm. The output signal of the sensor, the response time and the reversibility were investigated from the transient response characteristics of the sensors. The sensor parameters improved with higher operating temperature, up to 400 °C. The sensitivity of the sensors was found to be a function of applied bias across the Schottky junction. As compared with the Pd/3C-SiC junctions, the Ru/3C-SiC Schottky sensors showed higher resolution and better reversibility in the hydrogen concentration range 10000 to 20000 ppm. The SIMS (Secondary Ion Mass Spectrometry), RBS (Rutherford Backscattering Spectrometry) and GIXRD (Glancing Incidence X-ray Diffraction) studies indicated that up to 400 °C there was no formation of ruthenium silicide at the Ru/3C-SiC interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 801: Symposium BB – Materials and Technologies for a Hydrogen Economy , 2003 , BB6.2
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Tobias, P., Nakagomi, S., Baranzahi, A., Zhu, R., Lundström, I., Mårtensson, P. and Spetz, A.L. Materials Science Forum 264–268, 1097 (1998).Google Scholar
2. Samman, A., Gebremariam, S., Rimai, L., Zhang, X., Hangas, J. and Auner, G.W. Sens. Actuators B 63, 91 (2000).Google Scholar
3. Chen, L.Y., Hunter, G.W., Neudeck, P.G., Bansal, G., Petit, J.B., Knight, D., Liu, C.C. and Wu, Q.H. in Transactions of the Third International High Temperature Electronic Conference (HiTEC), Albuquerque, New Mexico, June 9–14 (1996), Vol. 1, pp. X17.Google Scholar
4. Roy, S., Basu, S., Jacob, C. and Tyagi, A. K., Appl. Surf. Sci. 202 73 (2002).Google Scholar
5. Roy, S., Jacob, C. and Basu, S., Sens. Actuators B 94 298 (2003).Google Scholar
6. Roy, S., Jacob, C., Zhang, M., Wang, S., Tyagi, A.K. and Basu, S., Appl. Surf. Sci. 211 300 (2003).Google Scholar
7. Sze, S.M. in Semiconductor Sensors, (John Wiley & Sons, Inc., New York, 1994) pp. 9.Google Scholar