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Scanning Atomic Force Microscopy and Scanning Electron Microscopy Study of Diamond Thin Films Grown by Microwave Plasma Enhanced Chemical Vapour Deposition

Published online by Cambridge University Press:  25 February 2011

Jaeshin Ahn ,
F.H. Tan ,
H.S. Tan  and
W. Zhu
Jaeshin Ahn
Affiliation:
School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 2263, Republic of Singapore
F.H. Tan
Affiliation:
School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 2263, Republic of Singapore
H.S. Tan
Affiliation:
School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 2263, Republic of Singapore
W. Zhu
Affiliation:
School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 2263, Republic of Singapore
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Abstract

The early stages of diamond thin film growth under various growth conditions have been investigated using Scanning Atomic Force Microscopy and Scanning Electron Microscopy. A series of experiment with various source gas combinations, substrate surface preparation methods and different substrates have been carried out to determine the effect on the diamond nucleation. The highest early nucleation density was obtained with CH4(1%)/H2 process among other gas combinations used. It is suggested that the atomic oxygen content should be kept minimum during the initial nucleation period of CVD diamond. It has been observed that diamond nucleation does not necessarily require diamond seeding dust. The silicon substrate polished with alumina powder showed diamond nucleation along the alumina scratched lines. In the process of diamond crystal growth, screw dislocations and stacking faults have been observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 270: Symposium M – Novel Forms of Carbon , 1992 , 359
Copyright
Copyright © Materials Research Society 1992

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References

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