Hostname: page-component-848d4c4894-nmvwc Total loading time: 0 Render date: 2024-07-04T12:21:58.117Z Has data issue: false hasContentIssue false
  • English
  • Français

Scattering of Free Carriers by Oxide Precipitates in Czochralski-Grown Silicon

Published online by Cambridge University Press:  28 February 2011

K. Nauka ,
W. Walukiewicz ,
J. Lagowski  and
H.C. Gatos
K. Nauka
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
W. Walukiewicz
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
J. Lagowski
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
H.C. Gatos
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
Get access

Abstract

Annealing of oxygen-rich Czochralski silicon at temperatures between 700°C and 1000°C introduces a new scattering mechanism which correlates very well with the presence of oxide precipitates. In lightly doped crystals (n,p ∼1015cm−3) this mechanism becomes dominant at T<170°C, and it determines to a large extent the value of the electron (hole) mobilities. The effect vanishes upon annealing at 1300°C; such heat treatment causes the dissolution of oxide precipitates. The new component mobility related to precipitates was found to exhibit a characteristic temperature dependence μ ∝ T0.5. This dependence was explained in terms of scattering of free carriers by spacially slowly varying potential associated with oxide precipitates of varying size.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 46: Symposium B – Microscopic Identification of Electronic Defects in Semiconductors , 1985 , 291
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Patel, J.R., in “'Semiconductor Silicon 1981”, edited by Huff, H.R., Kriegler, J.R., and Takeishi, Y., Electrochem. Soc. Meet. Proc. vol. 81–5, p. 189.Google Scholar
2. Jastrzebski, L., Zanzucchi, P., Thebault, D. and Lagowski, J., J. Electrochem. Soc. 129, 1638 (1982).CrossRefGoogle Scholar
3. Mao, B.-Y., Lagowski, J. and Gatos, H.C., Appl. Phys. Lett. 44, 42 (1984).Google Scholar
4.ASTM Standards F121-83, F123-81.Google Scholar
5. Rode, D.L., Phys. Stat. Sol. B53, 245 (1972).Google Scholar
6. Messier, J. and Flores, J.M., J. Phys. Chem. Solids 24, 1529 (1963).Google Scholar
7. Zhumatii, P.Z., Phys. Stat. Sol. B75, 61 (1976).CrossRefGoogle Scholar