Hostname: page-component-77c89778f8-9q27g Total loading time: 0 Render date: 2024-07-19T12:40:29.588Z Has data issue: false hasContentIssue false
  • English
  • Français

Schottky Barrier Modification Of Low Energy Ar-Ion Bombarded GaAs And Si

Published online by Cambridge University Press:  10 February 2011

P.N.K. Deenapanray ,
F.D. Auret  and
S.A. Goodman
P.N.K. Deenapanray
Affiliation:
Department of Physics, University of Pretoria, Pretoria 0002, pnk109@rsphysse.anu.edu.au
F.D. Auret
Affiliation:
Department of Physics, University of Pretoria, Pretoria 0002, pnk109@rsphysse.anu.edu.au
S.A. Goodman
Affiliation:
Department of Physics, University of Pretoria, Pretoria 0002, pnk109@rsphysse.anu.edu.au
Get access

Abstract

Epitaxially grown GaAs (p- and n-type) and n-Si were bombarded with low energy Ar-ions. Current voltage measurements on Schottky barrier diodes fabricated on the sputtered p-GaAs (Sc) and n-Si (Pd) showed that the series resistance and ideality factor were increased as the Arion dose was increased. The respective increase and decrease in barrier heights of Sc/p-GaAs and Pd/n-Si diodes were attributed to the presence of donor-type surface states in the bombarded material. The barrier heights of Au Schottky diodes made on n-GaAs changed nonmonotonically with Ar-ion sputter voltage. Variations of barrier height in the 0-1 kV range were explained by the introduction of donor-type defects. We demonstrated that the introduction of high concentrations of continuous level defects above 1 kV resulted in Fermi level pinning to become the dominant mechanism for controlling the effective barrier of current transport. Our results have shown that Schottky barrier properties could be changed by controlled amounts by varying the bombarding ion dose or sputter voltage.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 443
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Chou, S.Y., Liu, Y. and Fischer, P.B., Appl. Phys. Lett. 61, 477 (1992).Google Scholar
[2] Lang, D.V., J. Appl. Phys. 45, 3014 (1974).Google Scholar
[3] Ashok, S., Chow, T.P. and Baliga, B.J., Appl. Phys. Lett. 42, 687 (1983).Google Scholar
[4] Auret, F.D., Goodman, S.A., Myburg, G. and Meyer, W.E., J. Vac. Sci. & Technol. B 10, 2366 (1992).Google Scholar
[5] Goodman, S.A., Auret, F.D., Deenapanray, P.N.K. and Myburg, G., Jpn. J. Appl. Phys. 37, L10–L12 (1998).Google Scholar
[6] Rhoderick, E.H. and Williams, R.H., in Metal Semiconductor Contacts, edited by Hammond, P. and Grimsdale, R.L (Clarendon Press, Oxford, 1988), p. 226.Google Scholar
[7] Auret, F.D., Myburg, G., Goodman, S.A., Bredell, L.J. and Barnard, W.O., Nucl. Instr. and Meth. B 67, 410 (1992).Google Scholar