Hostname: page-component-848d4c4894-r5zm4 Total loading time: 0 Render date: 2024-07-03T23:23:54.882Z Has data issue: false hasContentIssue false
  • English
  • Français

Schottky Characteristics of Contacts to Complex Heterostructures

Published online by Cambridge University Press:  21 February 2011

S. Fujita ,
T. Noda ,
C. Nozaki ,
A. Wagai  and
Y. Ashizawa
S. Fujita
Affiliation:
Toshiba R&D Center, 1, Komukai-Toshiba-cho, Saiwaiku, Kawasaki, Japan
T. Noda
Affiliation:
Toshiba R&D Center, 1, Komukai-Toshiba-cho, Saiwaiku, Kawasaki, Japan
C. Nozaki
Affiliation:
Toshiba R&D Center, 1, Komukai-Toshiba-cho, Saiwaiku, Kawasaki, Japan
A. Wagai
Affiliation:
Toshiba R&D Center, 1, Komukai-Toshiba-cho, Saiwaiku, Kawasaki, Japan
Y. Ashizawa
Affiliation:
Toshiba R&D Center, 1, Komukai-Toshiba-cho, Saiwaiku, Kawasaki, Japan
Get access

Abstract

Schottky characteristics of electrical contacts to complex heterostructures consisting of intermediate semiconductor layers with various thicknesses and underlying bulk layers have been studied. For Au/InAlAs/InP structures, I-V characteristics with thin InAlAs layers are found to be similar to those of a MIS tunneling diode, while those with thick InAlAs layers are found to be close to that of Au/InAlAs. For Au/InP/InAlAs structures, a substantial current barrier are found to be formed not at Au/InP but at InP/InAlAs heterojunction. Schottky barrier height in the case of strained intermediate layers of In1-xGaxP is also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 469
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Rhoderick, E. H., Metal Semiconductor Contacts (Clarendon Press, Oxford, 1978).Google Scholar
2 Sze, S. M., Physics of Semiconductor Devices (Wiley, New York, 1969).Google Scholar
3 Wada, O.., Solid State Electron. 25 (1982) 381.Google Scholar
4 Fujita, S.., J. Appl. Phys, 73 (1993) 1287.Google Scholar
5 Matthews, J. W. and Blakeslee, A., J. Cryst. Growth 27, (1974) 118.Google Scholar
6 Loualiche, S.., SPIE Vol.1144 "Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices" (1989) 386.Google Scholar
7 Greenberg, D. R.., IEEE Electron Device Lett.,13 (1992) 137.Google Scholar
8 Loualiche, S.., Appl.Phys.Lett.,55 (1989) 2099.Google Scholar
9 Fujita, S.., IEEE Electron Device Lett. 14 (1993) 259.Google Scholar
10 Kuo, C. P.., J. Appl. Phys. 57 (1985) 5428.Google Scholar