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Schottky-Diodes in Laser Recrystallized Polysilicon
Published online by Cambridge University Press: 15 February 2011
Abstract
Schottky-diodes on laser recrystallized polycrystalline silicon are studied and compared to diodes fabricated on conventional, fine grained poly-Si. A strong dependence of reverse current on grain size is found and can be quantitatively explained by carrier generation at grain boundaries. In order to reduce the series resistance of the diodes, various methods to create a n+n doping profile in the recrystallized layer are investigated.
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- Copyright © Materials Research Society 1982