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Selective Chemical Vapor Deposition of Tungsten Films on Titanium—Ion—Irradiated Silicon Dioxide

Published online by Cambridge University Press:  21 February 2011

H. Okuhira ,
S. Nishimatsu  and
K. Ninomiya
H. Okuhira
Affiliation:
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185, Japan
S. Nishimatsu
Affiliation:
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185, Japan
K. Ninomiya
Affiliation:
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185, Japan
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Abstract

Selective area depositon of adherent tungsten (W) film on titanium (Ti)—ion—irradiated silicon dioxide (SiOz) is achieved. First, Ti—ion irradiation through a stencil mask is performed at 600 eV for 1.1 X 1016 atoms/cm2 in a reaction chamber. Next, ArF excimer laser (λ = 193 nm) chemical vapor deposition (CVD) with tungsten hexafluoride (WFs) and hydrogen (H2) is carried out for 40 seconds at 400 K. Finally, low—pressure (LP) CVD is carried out at 600 K and then W films are deposited selectively on the ion—irradiated SiO2 Without the laser CVD step, the ion—irradiation pattern disappears during LPCVD and no W film deposition occurs. Therefore, laser CVD is essential in our experiments.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 158: Symposium B – In-Situ Patterning: Selective Area Deposition and Etching , 1989 , 235
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

[1] Hennessy, W. A., Ghezzo, M., and Wilson, R. H., J. Electrochem. Soc. 135, 1730 (1988).Google Scholar
[2] Broadbent, E. K. and Ramiller, C. L., J. Electrochem. Soc. 131, 1427(1984).Google Scholar
[3] Matsuhashi, H., Nishikawa, S., and Ohno, S., Extended Abstracts of the 20th (1988 International) Conference on Solid State Devices and Materials, Tokyo, 1988, p.89.Google Scholar
[4] Barbour, J. C., Fischer, A. E. M. J., and Veen, J. F. van der, J.Appl. Phys. 62, 2582(1987).Google Scholar
[5] Liehr, M., LeGoues, F. K., Rubloff, G. W., and Ho, P. S., J. Vac. Sci. Technol. A3, 983(1985).Google Scholar
[6] Broadbent, E. K., Morgan, A. E., DeBlasi, J. M., Putte, P. van der, Burrow, B. J., Sanada, D. K., and Reader, A., J. Electrochem. Soc. 133, 1715(1968).Google Scholar