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Selective Doping of 4H-SiC by Aluminum/Boron Co-diffusion

Published online by Cambridge University Press:  21 March 2011

Ying Gao ,
S. I. Soloviev ,
X. Wang ,
C. C. Tin  and
T. S. Sudarshan
Ying Gao
Affiliation:
University of South Carolina, Department of Electrical Engineering, Columbia, SC 29208, U.S.A.
S. I. Soloviev
Affiliation:
University of South Carolina, Department of Electrical Engineering, Columbia, SC 29208, U.S.A.
X. Wang
Affiliation:
University of South Carolina, Department of Electrical Engineering, Columbia, SC 29208, U.S.A.
C. C. Tin
Affiliation:
Auburn University, Physics Department, Auburn, AL 36849, U.S.A.
T. S. Sudarshan
Affiliation:
University of South Carolina, Department of Electrical Engineering, Columbia, SC 29208, U.S.A.
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Abstract

Based upon graphite mask, selective aluminum/boron doping of SiC by thermal diffusion has been successfully realized in a temperature range of 1800 to 2100°C. Secondary ion mass spectrometry (SIMS) was used to identify the doping profiles, which showed very high aluminum concentration (5×1019 cm−3) near the surface and linearly graded boron profile up to several micrometers in depth. Hall-effect measurement was also employed to obtain the carrier concentration, which showed more than 1019 cm−3 carrier concentration at room temperature. Cathodoluminescence (CL) image clearly illustrated the locally diffused pattern. In addition, planar p-n diodes based upon this technique were fabricated and current-voltage (I-V) characteristics were measured. Excellent rectification property has been obtained. Built-in voltage of 2.9 V in the formed p-n junction was obtained by capacitance-voltage (C-V) measurement.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H6.9
Copyright
Copyright © Materials Research Society 2001

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References

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