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Selective Growth of Polycrystalline Diamond Thin Films

Published online by Cambridge University Press:  22 February 2011

R. Ramesham
R. Ramesham*
Affiliation:
Electrical Engineering Department, Alabama Microelectronics Science and Technology Center, Auburn University, Auburn, AL 36849–5201
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Abstract

Microwave plasma assisted CVD is employed to grow diamond films using a gas mixture of H2 and CH4on various substrates. Diamond has a tendency not to nucleate growth on mirror-smooth finished substrates irrespective of the substrate type (except single crystal diamond). We have developed various processes to enhance the nucleation density of the diamond substantially by damaging or seeding the surface of the substrates. Several process techniques such as 1. silicon nitride and silicon dioxide process, 2. ultrasonic agitation process, 3. selective seeding of diamond by electroplating of Cu, 4. patterning of diamond films by air-microwave plasma etching, etc., were developed to achieve the patterns of diamond on various substrates. Selective growth of doped diamond and low temperature growth of diamond for microelectronic applications have also been achieved by using the above processes (1 and 2). Details on selective diamond growth processes and the morphology of as-deposited selective diamond by SEM are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 703
Copyright
Copyright © Materials Research Society 1993

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References

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